دورية أكاديمية
Microscopic origin for the orientation dependence of NV centers in chemical-vapor-deposited diamond
| العنوان: | Microscopic origin for the orientation dependence of NV centers in chemical-vapor-deposited diamond |
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| المؤلفون: | Feng, Yexin, Li, X. Z., Wang, E. G., Zhang, S. B., Zhang, Lixin |
| المساهمون: | Feng, YX (reprint author), Nankai Univ, Sch Phys, Tianjin 300071, Peoples R China., Nankai Univ, Sch Phys, Tianjin 300071, Peoples R China., Peking Univ, Sch Phys, Beijing 100871, Peoples R China., Rensselaer Polytech Inst, Dept Phys Appl Phys & Astron, Troy, NY 12180 USA. |
| المصدر: | PubMed ; EI ; SCI |
| بيانات النشر: | journal of physics condensed matter |
| سنة النشر: | 2014 |
| المجموعة: | Peking University Institutional Repository (PKU IR) / 北京大学机构知识库 |
| مصطلحات موضوعية: | NV center, growth mechanism, surface, orientation dependence, INITIO MOLECULAR-DYNAMICS, ELECTRONIC-STRUCTURE, MAGNETIC-RESONANCE, SPINS |
| الوصف: | First-principles calculation reveals that hydrogen, which is abundant in chemical vapor deposition (CVD), can significantly improve the uniformity of nitrogen-vacancy (NV) centers in diamond. It shows that the formation of NV centers can be described as a multi-step process: first, a substitutional N (N-C) is preferentially formed at the surface layer over that of either a carbon vacancy (V-C) or an in-pane nitrogen-vacancy-hydrogen (NVH) complex. Second, with the help of H, a V-C is preferentially incorporated in the newly formed topmost layer as a nearest neighbor to the N-C (now buried in the first sublayer). This NVH complex is even more stable than N-C on the same layer. Third, H protects the already formed NV centers by forming low-energy NVHX complexes. These NV centers with their axes pointing along the directions of surface C-H bonds during their incorporation explain the experimental observations by CVD growth on (1 0 0) and (1 1 0) surfaces. Based on the model, we predict that CVD growth on (1 1 1) surface could eliminate the orientation domains to significantly improve the performance of NV centers. ; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000345221700004&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701Test ; Physics, Condensed Matter ; SCI(E) ; EI ; PubMed ; 1 ; ARTICLE ; lxzhang@nankai.edu.cn ; 48 ; 485004 ; 26 |
| نوع الوثيقة: | journal/newspaper |
| اللغة: | English |
| تدمد: | 0953-8984 1361-648X |
| العلاقة: | JOURNAL OF PHYSICS-CONDENSED MATTER.2014,26,(48).; 651002; http://hdl.handle.net/20.500.11897/295675Test; WOS:000345221700004 |
| DOI: | 10.1088/0953-8984/26/48/485004 |
| الإتاحة: | https://doi.org/20.500.11897/295675Test https://doi.org/10.1088/0953-8984/26/48/485004Test https://hdl.handle.net/20.500.11897/295675Test |
| رقم الانضمام: | edsbas.3B402F4F |
| قاعدة البيانات: | BASE |
| تدمد: | 09538984 1361648X |
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| DOI: | 10.1088/0953-8984/26/48/485004 |