التفاصيل البيبلوغرافية
| العنوان: |
Effect of oxygen plasma treatment on the performance of recessed AlGaN/GaN Schottky barrier diodes |
| المؤلفون: |
Mao, Wei, Xu, Shihao, Wang, Haiyong, Yang, Cui, Zhao, Shenglei, Chen, Jiabo, Zhang, Yachao, Zhang, Chunfu, Zhang, Jincheng, Hao, Yue |
| المساهمون: |
National Natural Science Foundation of China, National Key Science & Technology Special Project, the Key Research and Development Program of Shaanxi |
| المصدر: |
Applied Physics Express ; volume 15, issue 1, page 016504 ; ISSN 1882-0778 1882-0786 |
| بيانات النشر: |
IOP Publishing |
| سنة النشر: |
2022 |
| الوصف: |
The treatment effect of the oxygen plasma on the performance of recessed AlGaN/GaN Schottky barrier diodes has been investigated. After the oxygen plasma treatment, the turn-on voltage and reverse leakage current are slightly changed, while the current collapse could be effectively mitigated. The X-ray photoelectron spectroscopy results suggest that a thin surface oxide layer is formed by the oxygen plasma treatment, which is responsible for the reduced current collapse. In addition, the device treated by oxygen plasma has a relatively more inhomogeneous barrier height. |
| نوع الوثيقة: |
article in journal/newspaper |
| اللغة: |
unknown |
| DOI: |
10.35848/1882-0786/ac44cb |
| DOI: |
10.35848/1882-0786/ac44cb/pdf |
| الإتاحة: |
https://doi.org/10.35848/1882-0786/ac44cbTest |
| حقوق: |
https://iopscience.iop.org/page/copyrightTest ; https://iopscience.iop.org/info/page/text-and-data-miningTest |
| رقم الانضمام: |
edsbas.DBB03981 |
| قاعدة البيانات: |
BASE |
