التفاصيل البيبلوغرافية
| العنوان: |
Room-temperature continuous-wave operation of InAs quantum-wire laser on InP(001) substrate. |
| المؤلفون: |
Yang, X. R., Xu, B., Wang, Z.G., Jin, P., Liang, P., Hu, Y., Sun, H., Chen, Y. H., Liu, F. L. |
| المصدر: |
Electronics Letters (Institution of Engineering & Technology); 6/22/2006, Vol. 42 Issue 13, p757-758, 2p, 1 Chart, 3 Graphs |
| مصطلحات موضوعية: |
INDIUM arsenide, NANOWIRES, LASERS, MOLECULAR beam epitaxy, WAVEGUIDES |
| مستخلص: |
A self-assembled quantum-wire laser structure was grown by solid-source molecular beam epitaxy in an InAlGaAs-InAlAs matrix on InP(001) substrate. Ridge-waveguide lasers were fabricated and demonstrated to operate at a heatsink temperature up to 330 K in continuous-wave (CW) mode. The emission wavelength of the lasers with 5 mm-long cavity was 1.713 µm at room temperature in CW mode. The temperature stability of the devices was analysed and the characteristic temperature was found to be 47 K in the range of 220–320 K. [ABSTRACT FROM AUTHOR] |
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| قاعدة البيانات: |
Complementary Index |
