دورية أكاديمية

Circular photogalvanic effect in HgTe/CdHgTe quantum well structures

التفاصيل البيبلوغرافية
العنوان: Circular photogalvanic effect in HgTe/CdHgTe quantum well structures
المؤلفون: Wittmann, Bernhard, Danilov, Sergey, Belkov, Vassilij, Tarasenko, Sergey, Novik, E. G., Buhmann, Hartmut, Bruene, C., Molenkamp, L. W., Ivchenko, Eougenious, Kvon, Z. D., Mikhailov, N. N., Dvoretsky, S. A., Vinh, N. Q., van der Meer, A. F. G., Murdin, B., Ganichev, Sergey
بيانات النشر: Institute of Physics
سنة النشر: 2010
المجموعة: University of Regensburg Publication Server
مصطلحات موضوعية: 530 Physik, ddc:530
الوصف: We describe the observation of the circular and linear photogalvanic effects in HgTe/CdHgTe quantum wells. The interband absorption of mid-infrared radiation as well as the intrasubband absorption of terahertz radiation in the quantun well structures is shown to cause a dc electric current due to these effects. The photocurrent magnitude and direction varies with the radiation polarization state and crystallographic orientation of the substrate in a simple way that can be understood from a phenomenological theory. The observed dependences of the photocurrent on the radiation wavelength and temperature are discussed in terms of a microscopic model.
نوع الوثيقة: article in journal/newspaper
اللغة: unknown
العلاقة: Wittmann, Bernhard, Danilov, Sergey, Belkov, Vassilij, Tarasenko, Sergey, Novik, E. G., Buhmann, Hartmut, Bruene, C., Molenkamp, L. W., Ivchenko, Eougenious, Kvon, Z. D., Mikhailov, N. N., Dvoretsky, S. A., Vinh, N. Q., van der Meer, A. F. G., Murdin, B. und Ganichev, Sergey (2010) Circular photogalvanic effect in HgTe/CdHgTe quantum well structures. Semiconductor Science and Technology 25 (9), 095005.
DOI: 10.1088/0268-1242/25/9/095005
الإتاحة: https://doi.org/10.1088/0268-1242/25/9/095005Test
https://epub.uni-regensburg.de/24488Test/
رقم الانضمام: edsbas.F15B9929
قاعدة البيانات: BASE