المؤلفون: Zhang, Meng, Jiang, Zhendong, Lu, Lei, Wong, Man, Kwok, Hoi Sing

مصطلحات موضوعية: Degradation, Emission time, Junctions, Logic gates, Nonequilibrium junction degradation model, Polycrystalline silicon, Recapture time, Reliability, Stress, Thin film transistors, Thin-film transistors, Voltage

العلاقة: https://repository.hkust.edu.hk/ir/Record/1783.1-135082Test; IEEE Electron Device Letters, v. 45, (2), February 2024, article number 10366251, p. 204-207; https://doi.org/10.1109/LED.2023.3345282Test; http://lbdiscover.ust.hk/uresolver?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rfr_id=info:sid/HKUST:SPI&rft.genre=article&rft.issn=0741-3106&rft.volume=&rft.issue=&rft.date=2023&rft.spage=1&rft.aulast=Zhang&rft.aufirst=Meng&rft.atitle=Analysis+of+Degradation+Mechanism+in+Poly-Si+TFTs+under+Dynamic+Gate+Voltage+Stress+with+Short+Pulse+Width+Duration&rft.title=IEEE+Electron+Device+LettersTest; http://www.scopus.com/record/display.url?eid=2-s2.0-85182363827&origin=inwardTest

الإتاحة: https://doi.org/10.1109/LED.2023.3345282Test
https://repository.hkust.edu.hk/ir/Record/1783.1-135082Test
http://lbdiscover.ust.hk/uresolver?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rfr_id=info:sid/HKUST:SPI&rft.genre=article&rft.issn=0741-3106&rft.volume=&rft.issue=&rft.date=2023&rft.spage=1&rft.aulast=Zhang&rft.aufirst=Meng&rft.atitle=Analysis+of+Degradation+Mechanism+in+Poly-Si+TFTs+under+Dynamic+Gate+Voltage+Stress+with+Short+Pulse+Width+Duration&rft.title=IEEE+Electron+Device+LettersTest
http://www.scopus.com/record/display.url?eid=2-s2.0-85182363827&origin=inwardTest

المؤلفون: Zhang, Meng, Wang, Yunyang, Jiang, Zhendong, Xu, Xindi, Huang, Jinyang, Wong, Man, Kwok, Hoi-Sing

مصطلحات موضوعية: Fast transition time, Gate pulse stress, Hot carrier (HC), Nonequilibrium drain junction, Polycrystalline silicon (poly-Si), Thin-film transistors (TFTs)

العلاقة: https://repository.hkust.edu.hk/ir/Record/1783.1-132761Test; Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA, v. 2023-July, July 2023, article number 10249065; https://doi.org/10.1109/IPFA58228.2023.10249065Test; http://lbdiscover.ust.hk/uresolver?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rfr_id=info:sid/HKUST:SPI&rft.genre=article&rft.issn=&rft.volume=&rft.issue=&rft.date=2023&rft.spage=&rft.aulast=Zhang&rft.aufirst=Meng&rft.atitle=Dynamic+Hot+Carrier+Degradation+Behavior+ofTest+Polycrystalline+Silicon+Thin-Film+Transistors+under+Gate+Voltage+Pulse+Stress+with+Fast+Transition+Time&rft.title=Proceedings+of+the+International+Symposium+on+the+Physical+and+Failure+Analysis+of+Integrated+Circuits,+IPFA; http://www.scopus.com/record/display.url?eid=2-s2.0-85173559493&origin=inwardTest

الإتاحة: https://doi.org/10.1109/IPFA58228.2023.10249065Test
https://repository.hkust.edu.hk/ir/Record/1783.1-132761Test
http://lbdiscover.ust.hk/uresolver?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rfr_id=info:sid/HKUST:SPI&rft.genre=article&rft.issn=&rft.volume=&rft.issue=&rft.date=2023&rft.spage=&rft.aulast=Zhang&rft.aufirst=Meng&rft.atitle=Dynamic+Hot+Carrier+Degradation+Behavior+ofTest+Polycrystalline+Silicon+Thin-Film+Transistors+under+Gate+Voltage+Pulse+Stress+with+Fast+Transition+Time&rft.title=Proceedings+of+the+International+Symposium+on+the+Physical+and+Failure+Analysis+of+Integrated+Circuits,+IPFA
http://www.scopus.com/record/display.url?eid=2-s2.0-85173559493&origin=inwardTest

المؤلفون: Kris Baert, C. Vanhoof, P. Fiorini, Sherif Sedky, Matty Caymax, Stefano Loreti

المساهمون: Loreti, S.

مصطلحات موضوعية: Diffraction, Materials science, Tensile stre, chemistry.chemical_element, Germanium, engineering.material, Silicon germanium, Composite material, Spectroscopy, Tensile stress, Deposition (law), Germanium silicon alloy, Mechanical factors, Mechanical factor, X-ray scattering, X-ray diffraction, Semiconductor films, Transmission electron microscopy, Micromachining, Germanium silicon alloys, Semiconductor film, Surface micromachining, Crystallography, Polycrystalline silicon, chemistry, X-ray crystallography, engineering

الوصول الحر: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::32c5acb431fa4a192340da1eee2b467eTest
http://www.scopus.com/inward/record.url?eid=2-s2.0-84949784029&partnerID=40&md5=fff0e3a8d2da25f42909f4e784d33abeTest

مصطلحات الفهرس: Fast transition time, Gate pulse stress, Hot carrier (HC), Nonequilibrium drain junction, Polycrystalline silicon (poly-Si), Thin-film transistors (TFTs), Conference paper

URL: https://repository.hkust.edu.hk/ir/Record/1783.1-132761Test
https://doi.org/10.1109/IPFA58228.2023.10249065Test
http://lbdiscover.ust.hk/uresolver?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rfr_id=info:sid/HKUST:SPI&rft.genre=article&rft.issn=&rft.volume=&rft.issue=&rft.date=2023&rft.spage=&rft.aulast=Zhang&rft.aufirst=Meng&rft.atitle=Dynamic+Hot+Carrier+Degradation+Behavior+ofTest+Polycrystalline+Silicon+Thin-Film+Transistors+under+Gate+Voltage+Pulse+Stress+with+Fast+Transition+Time&rft.title=Proceedings+of+the+International+Symposium+on+the+Physical+and+Failure+Analysis+of+Integrated+Circuits%2C+IPFA
http://www.scopus.com/record/display.url?eid=2-s2.0-85173559493&origin=inwardTest