التفاصيل البيبلوغرافية
| العنوان: |
Analysis of the structural properties of polycrystalline silicon germanium films |
| المؤلفون: |
Kris Baert, C. Vanhoof, P. Fiorini, Sherif Sedky, Matty Caymax, Stefano Loreti |
| المساهمون: |
Loreti, S. |
| بيانات النشر: |
Institute of Electrical and Electronics Engineers Inc., 1999. |
| سنة النشر: |
1999 |
| مصطلحات موضوعية: |
Diffraction, Materials science, Tensile stre, chemistry.chemical_element, Germanium, engineering.material, Silicon germanium, Composite material, Spectroscopy, Tensile stress, Deposition (law), Germanium silicon alloy, Mechanical factors, Mechanical factor, X-ray scattering, X-ray diffraction, Semiconductor films, Transmission electron microscopy, Micromachining, Germanium silicon alloys, Semiconductor film, Surface micromachining, Crystallography, Polycrystalline silicon, chemistry, X-ray crystallography, engineering |
| الوصف: |
In this work, poly SiGe is proposed as a suitable material for surface micromachining applications that require a low thermal budget. The effect of the deposition conditions and layer thickness on the structural and mechanical properties of poly SiGe is analyzed by means of transmission electron microscopy (TEM) and X-ray diffraction spectroscopy (XRD). It is demonstrated that using as-grown poly SiGe (deposited at 625°C), a low tensile stress (+60 MPa) and a negligible stress gradient can be achieved. © 1999 Kuwait University. |
| اللغة: |
English |
| الوصول الحر: |
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::32c5acb431fa4a192340da1eee2b467eTest
http://www.scopus.com/inward/record.url?eid=2-s2.0-84949784029&partnerID=40&md5=fff0e3a8d2da25f42909f4e784d33abeTest |
| حقوق: |
OPEN |
| رقم الانضمام: |
edsair.doi.dedup.....32c5acb431fa4a192340da1eee2b467e |
| قاعدة البيانات: |
OpenAIRE |
