التفاصيل البيبلوغرافية
| العنوان: |
Dynamic Hot Carrier Degradation Behavior of Polycrystalline Silicon Thin-Film Transistors under Gate Voltage Pulse Stress with Fast Transition Time |
| المؤلفون: |
Zhang, Meng, Wang, Yunyang, Jiang, Zhendong, Xu, Xindi, Huang, Jinyang, Wong, Man, Kwok, Hoi-Sing |
| بيانات النشر: |
Institute of Electrical and Electronics Engineers Inc. |
| سنة النشر: |
2023 |
| المجموعة: |
The Hong Kong University of Science and Technology: HKUST Institutional Repository |
| مصطلحات موضوعية: |
Fast transition time, Gate pulse stress, Hot carrier (HC), Nonequilibrium drain junction, Polycrystalline silicon (poly-Si), Thin-film transistors (TFTs) |
| الوصف: |
Dynamic hot carrier (HC) degradation behavior of polycrystalline silicon (poly-Si) thin-film transistors (TFTs) under gate voltage pulse stress with fast transition time is systematically investigated for the first time. The dynamic HC degradation is dependent on pulse rising time but independent of pulse falling time. Extremely severe HC degeneration is observed under gate voltage pulse stress with a fast transition time smaller than 20 ns. Combined with TCAD simulations, the dynamic HC degradation mechanism is discussed. The test results would be helpful for the reliability designing of the poly-Si TFTs in high-frequency applications. © 2023 IEEE. |
| نوع الوثيقة: |
conference object |
| اللغة: |
English |
| تدمد: |
1946-1550
1946-1542 |
| العلاقة: |
https://repository.hkust.edu.hk/ir/Record/1783.1-132761Test; Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA, v. 2023-July, July 2023, article number 10249065; https://doi.org/10.1109/IPFA58228.2023.10249065Test; http://lbdiscover.ust.hk/uresolver?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rfr_id=info:sid/HKUST:SPI&rft.genre=article&rft.issn=&rft.volume=&rft.issue=&rft.date=2023&rft.spage=&rft.aulast=Zhang&rft.aufirst=Meng&rft.atitle=Dynamic+Hot+Carrier+Degradation+Behavior+of+Polycrystalline+Silicon+Thin-Film+Transistors+under+Gate+Voltage+Pulse+Stress+with+Fast+Transition+Time&rft.title=Proceedings+of+the+International+Symposium+on+the+Physical+and+Failure+Analysis+of+Integrated+Circuits,+IPFATest; http://www.scopus.com/record/display.url?eid=2-s2.0-85173559493&origin=inwardTest |
| DOI: |
10.1109/IPFA58228.2023.10249065 |
| الإتاحة: |
https://doi.org/10.1109/IPFA58228.2023.10249065Test
https://repository.hkust.edu.hk/ir/Record/1783.1-132761Test
http://lbdiscover.ust.hk/uresolver?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rfr_id=info:sid/HKUST:SPI&rft.genre=article&rft.issn=&rft.volume=&rft.issue=&rft.date=2023&rft.spage=&rft.aulast=Zhang&rft.aufirst=Meng&rft.atitle=Dynamic+Hot+Carrier+Degradation+Behavior+of+Polycrystalline+Silicon+Thin-Film+Transistors+under+Gate+Voltage+Pulse+Stress+with+Fast+Transition+Time&rft.title=Proceedings+of+the+International+Symposium+on+the+Physical+and+Failure+Analysis+of+Integrated+Circuits,+IPFATest
http://www.scopus.com/record/display.url?eid=2-s2.0-85173559493&origin=inwardTest |
| رقم الانضمام: |
edsbas.46AB129D |
| قاعدة البيانات: |
BASE |
