التفاصيل البيبلوغرافية
| العنوان: |
Analysis of Degradation Mechanism in Poly-Si TFTs under Dynamic Gate Voltage Stress with Short Pulse Width Duration |
| المؤلفون: |
Zhang, Meng, Jiang, Zhendong, Lu, Lei, Wong, Man, Kwok, Hoi Sing |
| بيانات النشر: |
Institute of Electrical and Electronics Engineers Inc. |
| سنة النشر: |
2024 |
| المجموعة: |
The Hong Kong University of Science and Technology: HKUST Institutional Repository |
| مصطلحات موضوعية: |
Degradation, Emission time, Junctions, Logic gates, Nonequilibrium junction degradation model, Polycrystalline silicon, Recapture time, Reliability, Stress, Thin film transistors, Thin-film transistors, Voltage |
| الوصف: |
Degradation behaviors of polycrystalline silicon thin-film transistors under dynamic gate voltage stress with short pulse width duration are systematically investigated for the first time. Both the peak voltage duration and the base voltage duration have an impact on the hot carrier degradation of the device. Incorporated with simulations, an advanced model for nonequilibrium junction degradation is proposed. IEEE |
| نوع الوثيقة: |
article in journal/newspaper |
| اللغة: |
English |
| تدمد: |
0741-3106
1558-0563 |
| العلاقة: |
https://repository.hkust.edu.hk/ir/Record/1783.1-135082Test; IEEE Electron Device Letters, v. 45, (2), February 2024, article number 10366251, p. 204-207; https://doi.org/10.1109/LED.2023.3345282Test; http://lbdiscover.ust.hk/uresolver?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rfr_id=info:sid/HKUST:SPI&rft.genre=article&rft.issn=0741-3106&rft.volume=&rft.issue=&rft.date=2023&rft.spage=1&rft.aulast=Zhang&rft.aufirst=Meng&rft.atitle=Analysis+of+Degradation+Mechanism+in+Poly-Si+TFTs+under+Dynamic+Gate+Voltage+Stress+with+Short+Pulse+Width+Duration&rft.title=IEEE+Electron+Device+LettersTest; http://www.scopus.com/record/display.url?eid=2-s2.0-85182363827&origin=inwardTest |
| DOI: |
10.1109/LED.2023.3345282 |
| الإتاحة: |
https://doi.org/10.1109/LED.2023.3345282Test
https://repository.hkust.edu.hk/ir/Record/1783.1-135082Test
http://lbdiscover.ust.hk/uresolver?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rfr_id=info:sid/HKUST:SPI&rft.genre=article&rft.issn=0741-3106&rft.volume=&rft.issue=&rft.date=2023&rft.spage=1&rft.aulast=Zhang&rft.aufirst=Meng&rft.atitle=Analysis+of+Degradation+Mechanism+in+Poly-Si+TFTs+under+Dynamic+Gate+Voltage+Stress+with+Short+Pulse+Width+Duration&rft.title=IEEE+Electron+Device+LettersTest
http://www.scopus.com/record/display.url?eid=2-s2.0-85182363827&origin=inwardTest |
| رقم الانضمام: |
edsbas.D9B94095 |
| قاعدة البيانات: |
BASE |
