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1دورية أكاديمية
المؤلفون: Johnson, Robert A., Witulski, Arthur F., Ball, Dennis R., Galloway, Kenneth F., Sternberg, Andrew L., Zhang, Enxia, Ryder, Landen D., Reed, Robert A., Schrimpf, Ronald D., Kozub, John A., Lauenstein, Jean-Marie, Javanainen, Arto
مصطلحات موضوعية: pulse height analysis, Schottky diodes, silicon carbide, single-event effects, two-photon absorption, vertical MOSFET, säteilyfysiikka, diodit, elektroniikkakomponentit, transistorit
وصف الملف: application/pdf; 1694-1701; fulltext
العلاقة: IEEE Transactions on Nuclear Science; 66; Johnson, R. A., Witulski, A. F., Ball, D. R., Galloway, K. F., Sternberg, A. L., Zhang, E., Ryder, L. D., Reed, R. A., Schrimpf, R. D., Kozub, J. A., Lauenstein, J.-M., & Javanainen, A. (2019). Enhanced Charge Collection in SiC Power MOSFETs Demonstrated by Pulse-Laser Two-Photon Absorption SEE Experiments. IEEE Transactions on Nuclear Science , 66 (7), 1694-1701. https://doi.org/10.1109/TNS.2019.2922883Test; CONVID_30946007; TUTKAID_81671; URN:NBN:fi:jyu-201907173642; http://urn.fi/URN:NBN:fi:jyu-201907173642Test
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المؤلفون: Ronald D. Schrimpf, Arthur F. Witulski, En Xia Zhang, Landen D. Ryder, Jean-Marie Lauenstein, John A. Kozub, Dennis R. Ball, Arto Javanainen, Robert A. Johnson, Robert A. Reed, Andrew L. Sternberg, Kenneth F. Galloway
مصطلحات موضوعية: Nuclear and High Energy Physics, Materials science, single-event effects, Schottky diodes, Semiconductor laser theory, elektroniikkakomponentit, chemistry.chemical_compound, silicon carbide, MOSFET, Silicon carbide, two-photon absorption, Electrical and Electronic Engineering, Power MOSFET, vertical MOSFET, Diode, business.industry, Schottky diode, Semiconductor device, Nuclear Energy and Engineering, chemistry, säteilyfysiikka, transistorit, Optoelectronics, Charge carrier, diodit, business, pulse height analysis
وصف الملف: application/pdf; fulltext
الوصول الحر: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2c1d445427e8d10574beb2a2e120b4dfTest
http://urn.fi/URN:NBN:fi:jyu-201907173642Test
