Kinematical study of GexSi1 – x/Si strained-layer superlattice by a double crystal X-ray diffraction method
العنوان: | Kinematical study of GexSi1 – x/Si strained-layer superlattice by a double crystal X-ray diffraction method |
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المؤلفون: | Duan Xf, Sheng C, Wang Yt, Ouyang Jt |
المصدر: | Philosophical Magazine Letters. 67:1-7 |
بيانات النشر: | Informa UK Limited, 1993. |
سنة النشر: | 1993 |
مصطلحات موضوعية: | Crystal, Diffraction, Crystallography, Reflection (mathematics), Chemistry, Superlattice, X-ray crystallography, Analytical chemistry, Perpendicular, Double crystal, Condensed Matter Physics, Layer (electronics) |
الوصف: | Two samples of nominal 20-period Ge0.20Si0.80(5 nm)/Si(25 nm) and Ge0.5Si0.5(5 nm)/Si(25 nm) strained-layer superlattices (SLSs) were studied by the double-crystal X-ray diffraction method. It is convenient to define the perpendicular strains relative to the average crystal. Computer simulations of the rocking curves were performed using a kinematical step model. An excellent agreement between the measured and simulated satellite patterns is achieved. The dependence of the sensitivity of the rocking curves to the structural parameters of the SLS, such as the alloying concentration x and the layer thicknesses and the L component of the reflection g = (HKL), are clearly demonstrated. |
تدمد: | 1362-3036 0950-0839 |
الوصول الحر: | https://explore.openaire.eu/search/publication?articleId=doi_________::2aa93c5676bdfdc2706b7a2becea1053Test https://doi.org/10.1080/09500839308240484Test |
رقم الانضمام: | edsair.doi...........2aa93c5676bdfdc2706b7a2becea1053 |
قاعدة البيانات: | OpenAIRE |
تدمد: | 13623036 09500839 |
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