المؤلفون: Pan, Aixi¹ (AUTHOR) a22pan@uwaterloo.ca, Zhu, Chenxu¹ (AUTHOR) c46zhu@uwaterloo.ca, Yan, Zheng¹ (AUTHOR) z55yan@uwaterloo.ca, Zhu, Xiaoli¹ (AUTHOR) xiaoli.zhu@uwaterloo.ca, Liu, Zhongyi² (AUTHOR) z773liu@uwaterloo.ca, Cui, Bo¹ (AUTHOR)

المصدر: IEEE Transactions on Semiconductor Manufacturing. May2024, Vol. 37 Issue 2, p160-165. 6p.

مصطلحات موضوعية: SILICON oxide, ELECTRON beam lithography, SULFUR hexafluoride, SILICA, SILICON

الشركة/الكيان: ROBERT Bosch GmbH

المؤلفون: Dwivedi, Ajay Kumar¹ (AUTHOR) ajay.2019rel03@mnnit.ac.in, Jit, Satyabrata² (AUTHOR) sjit.ece@iitbhu.ac.in, Tripathi, Shweta¹ (AUTHOR) shtri@ mnnit.ac.in

المصدر: IEEE Transactions on Semiconductor Manufacturing. Feb2024, Vol. 37 Issue 1, p129-136. 8p.

مصطلحات موضوعية: PHOTODETECTORS, INDIUM tin oxide, NANOCOMPOSITE materials, ULTRAVIOLET spectra, ZINC oxide, DISPERSION (Chemistry)

المؤلفون: Nien, Yu-Hsun¹ (AUTHOR) nienyh@yuntech.edu.tw, Zhuang, Shang-Wen¹ (AUTHOR) m11015032@gemail.yuntech.edu.tw, Chou, Jung-Chuan² (AUTHOR) choujc@yuntech.edu.tw, Yang, Po-Hui² (AUTHOR) phyang@yuntech.edu.tw, Lai, Chih-Hsien² (AUTHOR) chlai@yuntech.edu.tw, Kuo, Po-Yu² (AUTHOR) kuopy@yuntech.edu.tw, Ho, Chih-Sung³ (AUTHOR) csho@thu.edu.tw, Wu, Yi-Ting¹ (AUTHOR) m10915028@gemail.yuntech.edu.tw, Syu, Ruei-Hong² (AUTHOR) m10913076@gemail.yuntech.edu.tw, Chen, Po-Feng² (AUTHOR) m11013045@gemail.yuntech.edu.tw

المصدر: IEEE Transactions on Semiconductor Manufacturing. May2023, Vol. 36 Issue 2, p291-297. 7p.

مصطلحات موضوعية: DYE-sensitized solar cells, FERRIC oxide, NITRIDES, FIELD emission electron microscopes, NANOFIBERS, ELECTROSPINNING

المؤلفون: Qin, Wenbo¹ 1810318@stu.neu.edu.cn, Yuan, Zhenyu¹ yuanzhenyu@ise.neu.edu.cn, Shen, Yanbai² shenyanbai@mail.neu.edu.cn, Meng, Fanli¹ mengfanli@ise.neu.edu.cn

المصدر: IEEE Transactions on Industrial Electronics. Mar2023, Vol. 70 Issue 3, p3188-3198. 11p.

مصطلحات موضوعية: METAL oxide semiconductors, MICROSPHERES, GAS detectors, ALCOHOL, SURFACES (Technology), ORGANOMETALLIC compounds, METHANOL as fuel

المؤلفون: Liu, Rui, Li, Hao, Yang, Zhao, Wang, Guantao, Chen, Zefu, Zhang, Peiyong

المصدر: IEEE Transactions on Semiconductor Manufacturing; May2024, Vol. 37 Issue 2, p146-151, 6p

مصطلحات موضوعية: THRESHOLD voltage, MANUFACTURING defects, STATIC random access memory, MONTE Carlo method, STANDARD deviations, TRANSISTORS, RANDOM access memory, COMPLEMENTARY metal oxide semiconductors

المؤلفون: Stark, Roger¹ (AUTHOR) stark@aps.ee.ethz.ch, Tsibizov, Alexander¹ (AUTHOR) tsibizov@aps.ee.ethz.ch, Kovacevic-Badstuebner, Ivana¹ (AUTHOR) kovacevic@aps.ee.ethz.ch, Ziemann, Thomas¹ (AUTHOR) ziemann@aps.ee.ethz.ch, Grossner, Ulrike¹ (AUTHOR) ulrike.grossner@ethz.ch

المصدر: IEEE Transactions on Power Electronics. Sep2022, Vol. 37 Issue 9, p10572-10584. 13p.

مصطلحات موضوعية: SILICON carbide, METAL oxide semiconductor field-effect transistors, FIELD-effect transistors, ELECTRIC capacity, INDIUM gallium zinc oxide, CAPACITANCE-voltage characteristics, METALLIC oxides

المؤلفون: Wang, Xue-Jiao¹, Li, Zhao-Yang¹, Yan, Zhao-Zhang¹, Chen, Lei-Gang¹, Li, Zhong-Hua¹, Jiang, Yu-Long¹ yljiang@fudan.edu.cn, Wan, Jing² jingwan@fudan.edu.cn

المصدر: IEEE Transactions on Electron Devices. Sep2022, Vol. 69 Issue 9, p5368-5372. 5p.

مصطلحات موضوعية: *INTEGRATED circuits, INDIUM gallium zinc oxide, THRESHOLD voltage, OXIDES, METAL oxide semiconductor field-effect transistors, LOGIC circuits

مصطلحات جغرافية: HONG Kong (China)

المؤلفون: Kuo, Po-Yi¹ pykuo@fcu.edu.tw, Li, Zhen-Hao², Chang, Chien-Min², Liu, Po-Tsun²

المصدر: IEEE Transactions on Electron Devices. Sep2022, Vol. 69 Issue 9, p4791-4795. 5p.

مصطلحات موضوعية: AMORPHOUS semiconductors, METAL oxide semiconductor field-effect transistors, TRANSISTORS, TUNGSTEN oxides, INDIUM oxide, OXIDES, MODULATION-doped field-effect transistors

المؤلفون: Fu, Yu¹ yufu@std.uestc.edu.cn, Chang, Yuhao¹, Zhu, Xiaohua¹, Xu, Ruimin², Xu, Yuehang² yuehangxu@uestc.edu.cn, Kawarada, Hiroshi¹ kawarada@waseda.jp

المصدر: IEEE Transactions on Electron Devices. Aug2022, Vol. 69 Issue 8, p4144-4152. 9p.

مصطلحات موضوعية: METAL oxide semiconductor field-effect transistors, INDIUM gallium zinc oxide, ELECTRON affinity, AUGER electron spectroscopy, ATOMIC layer deposition, FIELD-effect transistors, DIAMONDS

المؤلفون: Hong, Ruohao¹, Tian, Qianlei¹, Lin, Jun¹, Wang, Liming¹, Bu, Tong¹, Huang, Hao² hhuang@gxu.edu.cn, Qin, Wenjing¹ qwj@hunnu.edu.cn, Liao, Lei³, Zou, Xuming¹ zouxuming@hnu.edu.cn

المصدر: IEEE Transactions on Electron Devices. Aug2022, Vol. 69 Issue 8, p4293-4297. 5p.

مصطلحات موضوعية: INDIUM gallium zinc oxide, ALUMINUM oxide, DIELECTRICS, TRANSISTORS, COMPLEMENTARY metal oxide semiconductors, LOGIC circuits