مؤتمر
Improvement in Electrical Properties of A1/La 2 O 3 /ZrO 2 / Gate Stack Deposited on LaON Passivated GaAs Substrate
| العنوان: | Improvement in Electrical Properties of A1/La 2 O 3 /ZrO 2 / Gate Stack Deposited on LaON Passivated GaAs Substrate |
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| المؤلفون: | Barhate, Viral N., Agrawal, Khushabu S., Patil, Vilas S., Mahajan, Ashok M. |
| المصدر: | 2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) |
| بيانات النشر: | IEEE |
| سنة النشر: | 2020 |
| نوع الوثيقة: | conference object |
| اللغة: | unknown |
| DOI: | 10.1109/edtm47692.2020.9117895 |
| الإتاحة: | https://doi.org/10.1109/edtm47692.2020.9117895Test http://xplorestaging.ieee.org/ielx7/9110268/9117802/09117895.pdf?arnumber=9117895Test |
| حقوق: | https://ieeexplore.ieee.org/Xplorehelp/downloads/license-information/IEEE.htmlTest ; https://doi.org/10.15223/policy-029Test ; https://doi.org/10.15223/policy-037Test |
| رقم الانضمام: | edsbas.8725BBD9 |
| قاعدة البيانات: | BASE |
| DOI: | 10.1109/edtm47692.2020.9117895 |
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