دورية أكاديمية
Electrical characteristics of a vertically integrated field-effect transistor using non-intentionally doped Si nanowires
| العنوان: | Electrical characteristics of a vertically integrated field-effect transistor using non-intentionally doped Si nanowires |
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| المؤلفون: | Rosaz, G., Salem, B., Pauc, N., Gentile, P., Potié, A., Baron, T. |
| المصدر: | Microelectronic Engineering ; volume 88, issue 11, page 3312-3315 ; ISSN 0167-9317 |
| بيانات النشر: | Elsevier BV |
| سنة النشر: | 2011 |
| المجموعة: | ScienceDirect (Elsevier - Open Access Articles via Crossref) |
| مصطلحات موضوعية: | Electrical and Electronic Engineering, Surfaces, Coatings and Films, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials |
| نوع الوثيقة: | article in journal/newspaper |
| اللغة: | English |
| DOI: | 10.1016/j.mee.2011.07.009 |
| الإتاحة: | https://doi.org/10.1016/j.mee.2011.07.009Test https://api.elsevier.com/content/article/PII:S0167931711006320?httpAccept=text/xmlTest https://api.elsevier.com/content/article/PII:S0167931711006320?httpAccept=text/plainTest |
| حقوق: | https://www.elsevier.com/tdm/userlicense/1.0Test/ |
| رقم الانضمام: | edsbas.825A8EFE |
| قاعدة البيانات: | BASE |
| DOI: | 10.1016/j.mee.2011.07.009 |
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