التفاصيل البيبلوغرافية
| العنوان: |
Impact of MeV-Ag ions irradiation of silicon substrate on structural and optical properties of porous silicon. |
| المؤلفون: |
Naddaf, M.1 (AUTHOR) cscientific@aec.org.sy, Ahmad, M.2 (AUTHOR), Salman, N.1 (AUTHOR) |
| المصدر: |
Nuclear Instruments & Methods in Physics Research Section B. Mar2024, Vol. 548, pN.PAG-N.PAG. 1p. |
| مصطلحات موضوعية: |
*POROUS silicon, *RAMAN scattering, *ION bombardment, *IRRADIATION, *OPTICAL properties, *ENERGY dispersive X-ray spectroscopy, *SILICON |
| مستخلص: |
Porous silicon (PSi) was formed by an electrochemical etching of crystalline silicon substrates irradiated with silver (Ag) ion beam with energy of 1.25 MeV. Micro-Raman scattering results reveal that the irradiation process induces amorphization in the silicon substrate. Scanning electron microscopy, energy dispersive X-ray spectroscopy and micro-Raman scattering results show that the irradiation process induces important morphological and structural modifications in the PSi layer. The irradiation process leads to a considerable enhancement in the etching rate, a significant increase in the O/Si ratio and a reduction in the average size of the silicon nano-crystallites (nc- Si) from ∼7.76 nm to ∼2.26 nm in the skeleton of the PSi layer. These changes resulted in an important modification of photoluminescence (PL) properties of the PSi layer. Additional PL peak associated with the 'F-band' of the PSi was de-convoluted in the PL spectrum of the PSi layer formed on the irradiated silicon substrate. [ABSTRACT FROM AUTHOR] |
| قاعدة البيانات: |
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