التفاصيل البيبلوغرافية
| العنوان: |
Roll-over behavior in current-voltage curve introduced by an energy barrier at the front contact in thin film CdTe solar cell. |
| المؤلفون: |
Li, Xun1, Shen, Kai1,2, Li, Qiang1, Deng, Yi3, Zhu, Peng4, Wang, Deliang1 eedewang@ustc.edu.cn |
| المصدر: |
Solar Energy. May2018, Vol. 165, p27-34. 8p. |
| مصطلحات موضوعية: |
*ELECTRIC potential, *ACTIVATION energy, *THIN films, *SOLAR cells, *DOPING agents (Chemistry) |
| مستخلص: |
Roll-over phenomenon in the current–voltage (J–V) curve is often observed in a CdTe thin film solar cell. The roll-over phenomenon, which is occurred near the open-circuit voltage in a light J–V curve, is due to Schottky energy barrier formed at the CdTe/metal interface in a CdTe solar cell back contact. In this study we report a J–V roll-over phenomenon which is induced by an energy barrier at the front contact of a CdTe solar cell. Two kinds of oxides, namely, Al 2 O 3 and SnO 2 , were deposited as high-resistance transparent (HRT) layer between the window layer CdS and the fluorine doped tin oxide (FTO) front electrode in CdTe solar cells. These two oxides present much different electronic band alignment with FTO and CdS. SnO 2 formed almost no energy barrier with CdS, this allowed smooth transport for photo-generated electrons from CdTe to CdS and FTO. However, Al 2 O 3 formed a high energy barrier with CdS. The rather high energy barrier with a value of 3.43 eV at the CdS/Al 2 O 3 interface induced a J–V roll-over phenomenon in a CdTe thin film solar cell, which dramatically led to a quick decrease for the cell device efficiency. The electron transport at the FTO/Al 2 O 3 /CdS interface is governed by tunneling effect. The results presented in this study demonstrate that the band structure at the front electrode plays an important role for the performance of a CdTe thin film solar cell. [ABSTRACT FROM AUTHOR] |
| قاعدة البيانات: |
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