المؤلفون: Ahmeda, K., Ubochi, B., Alqaysi, M.H., Al-Khalidi, Abdullah, Wasige, Edward, Kalna, Karol

وصف الملف: text

العلاقة: http://eprints.gla.ac.uk/228522/2/228522.pdfTest; Ahmeda, K., Ubochi, B., Alqaysi, M.H., Al-Khalidi, A. , Wasige, E. and Kalna, K. (2020) The role of SiN/GaN cap interface charge and GaN cap layer to achieve enhancement mode GaN MIS-HEMT operation. Microelectronics Reliability , 115, 113965. (doi:10.1016/j.microrel.2020.113965 )

الإتاحة: https://doi.org/10.1016/j.microrel.2020.113965Test
http://eprints.gla.ac.uk/228522Test/
http://eprints.gla.ac.uk/228522/2/228522.pdfTest

المؤلفون: Benbakhti, Brahim, Chan, KahHou, Towie, Ewan, Kalna, Karol, Riddet, Craig, Wang, Xingsheng, Eneman, Geert, Hellings, Geert, De Meyer, Kristin, Meuris, Marc, Asenov, Asen

العلاقة: Benbakhti, B. et al. (2011) Numerical analysis of the new implant-free quantum-well CMOS: DualLogic approach. Solid-State Electronics , 63(1), pp. 14-18. (doi:10.1016/j.sse.2011.05.006 )

الإتاحة: https://doi.org/10.1016/j.sse.2011.05.006Test
http://eprints.gla.ac.uk/62561Test/

المؤلفون: Benbakhti, Brahim, Ayubi-Moak, J.S, Kalna, Karol, Lin, Dennis, Hellings, Geert, Brammertz, Guy, De Meyer, Kristin, Thayne, I, Asenov, Asen

العلاقة: Microelectronics Reliability vol:50 issue:3 pages:360-364; https://lirias.kuleuven.be/handle/123456789/303175Test; P20501

الإتاحة: https://lirias.kuleuven.be/handle/123456789/303175Test