Epitaxial films of NdFeAsO were grown on GaAs substrates by molecular beam epitaxy (MBE). All elements including oxygen were supplied from solid sources using Knudsen cells. The X-ray diffraction pattern of the film prepared with the optimum growth condition showed no indication of impurity phases. Only (00l) peaks were observed, indicating that NdFeAsO was grown with the c-axis perpendicular to the substrate. The window of optimum growth condition was very narrow, but the NdFeAsO phase was grown with a very good reproducibility. Despite the absence of any appreciable secondary phase, the resistivity showed an increase with decreasing temperature.
