Modelling radiation damage to pixel sensors in the ATLAS detector

التفاصيل البيبلوغرافية
العنوان: Modelling radiation damage to pixel sensors in the ATLAS detector
المؤلفون: Aaboud, M, Aad, G, Abbott, B, Abbott, DC, Abdinov, O, Abhayasinghe, DK, Abidi, SH, Abouzeid, OS, Abraham, NL, Abramowicz, H, Abreu, H, Abulaiti, Y, Acharya, BS, Adachi, S, Adam, L, Adam Bourdarios, C, Adamczyk, L, Adamek, L, Adelman, J, Adersberger, M, Adiguzel, A, Adye, T, Affolder, AA, Afik, Y, Agapopoulou, C, Agaras, MN, Aggarwal, A, Agheorghiesei, C, Aguilar-Saavedra, JA, Ahmadov, F, Aielli, G, Akatsuka, S, Åkesson, TPA, Akilli, E, Akimov, AV, Al Khoury, K, Alberghi, GL, Albert, J, Alconada Verzini, MJ, Alderweireldt, S, Aleksa, M, Aleksandrov, IN, Alexa, C, Alexandre, D, Alexopoulos, T, Alhroob, M, Ali, B, Alimonti, G, Alison, J, Alkire, SP, Allaire, C, Allbrooke, BMM, Allen, BW, Allport, PP, Aloisio, A, Alonso, A, Alonso, F, Alpigiani, C, Alshehri, AA, Alstaty, MI, Alvarez Estevez, M, Alvarez Gonzalez, B, Álvarez Piqueras, D, Alviggi, MG, Amaral Coutinho, Y, Ambler, A, Ambroz, L, Amelung, C, Amidei, D, Amor Dos Santos, SP, Amoroso, S, Amrouche, CS, An, F, Anastopoulos, C, Andari, N, Andeen, T, Anders, CF, Anders, JK, Andreazza, A, Andrei, V, Anelli, CR, Angelidakis, S, Angelozzi, I, Angerami, A, Anisenkov, AV, Annovi, A, Antel, C, Anthony, MT, Antonelli, M, Antrim, DJA, Anulli, F, Aoki, M, Aparisi Pozo, JA, Aperio Bella, L, Arabidze, G, Araque, JP, Araujo Ferraz, V, Araujo Pereira, R, Arce, ATH, Arduh, FA
المساهمون: Apollo - University of Cambridge Repository
المصدر: Journal of Instrumentation, vol 14, iss 06
Journal of Instrumentation, vol 14, iss 6
بيانات النشر: Apollo - University of Cambridge Repository, 2020.
سنة النشر: 2020
مصطلحات موضوعية: Other Physical Sciences, Detector modelling and simulations II (electric fields, charge transport, multiplication and induction, pulse formation, electron emission, etc), Engineering, hep-ex, Physics::Instrumentation and Detectors, Physical Sciences, High Energy Physics::Experiment, Detector modelling and simulations II, Solid state detectors, physics.ins-det, Nuclear & Particles Physics, Radiation-hard detectors
الوصف: Silicon pixel detectors are at the core of the current and planned upgrade of the ATLAS experiment at the LHC. Given their close proximity to the interaction point, these detectors will be exposed to an unprecedented amount of radiation over their lifetime. The current pixel detector will receive damage from non-ionizing radiation in excess of $10^{15}$ 1 MeV ${n}_{eq}/{cm}^2$, while the pixel detector designed for the high-luminosity LHC must cope with an order of magnitude larger fluence. This paper presents a digitization model incorporating effects of radiation damage to the pixel sensors. The model is described in detail and predictions for the charge collection efficiency and Lorentz angle are compared with collision data collected between 2015 and 2017 ($\leq 10^{15}$ 1 MeV ${n}_{eq}/{cm}^2$).
وصف الملف: application/pdf
DOI: 10.17863/cam.53854
الوصول الحر: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::05f2913a9d5caee8d12e0949ef9b60bbTest
حقوق: OPEN
رقم الانضمام: edsair.doi.dedup.....05f2913a9d5caee8d12e0949ef9b60bb
قاعدة البيانات: OpenAIRE