دورية أكاديمية
Effects of P-Type SnO x Thin-Film Transistors with N 2 and O 2 Ambient Furnace Annealing
| العنوان: | Effects of P-Type SnO x Thin-Film Transistors with N 2 and O 2 Ambient Furnace Annealing |
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| المؤلفون: | Zhang, Yu-Xin, Wu, Chien-Hung, Chang, Kow-Ming, Chen, Yi-Ming, Xu, Ni, Tsai, Kai-Chien |
| المصدر: | Journal of Nanoscience and Nanotechnology ; volume 20, issue 7, page 4069-4072 ; ISSN 1533-4880 |
| بيانات النشر: | American Scientific Publishers |
| سنة النشر: | 2020 |
| مصطلحات موضوعية: | Condensed Matter Physics, General Materials Science, Biomedical Engineering, General Chemistry, Bioengineering |
| الوصف: | Recently oxide-based thin-film transistors (TFTs) are investigated for emerging applications of the next generation display devices and other electronic circuits (Fortunato, E., et al., 2012. Oxide semiconductor thin-film transistors: A review of recent advances. Advanced Materials, 24 , pp.2945–2986). Despite of the great success in n -type oxide semiconductors with high transparency and high field-effect mobility, high performance P -type oxide TFTs are so highly desired that complementary circuits can be realized with low power and high performance (Ou, W.C., et al., 2008. Anomalous P -channel amorphous oxide transistors based on tin oxide and their complementary circuits. Applied Physics Letters, 92 , p.122113). There are some oxides such as SnO, CuO, Cu 2 O and NiO are regarded as promising P -type semiconductor materials. In this investigation, tin oxide SnO x is fabricated to be active layer for TFTs device, and furnace annealing with several combinations of nitrogen and oxygen ambient is compared to enhance the electrical characteristics of P -type SnO x TFTs (Park, K.S., et al., 2009. High performance solution-processed and lithographically patterned zinc-tin oxide thin-film transistors with good operational stability. Electrochemical and Solid-State Lett., 12 , pp.H256–H258). The results show that with N 2 +O 2 ambient, 30 minutes furnace annealing, the P -type SnO x TFTs device shows better performance with mobility ( μ FE ) 0.883 cm 2 /V · S, threshold voltage ( V T ) −4.63 V, subthreshold swing (SS) 1.15 V/decade, and I on / I off ratio 1.01×10 3 . |
| نوع الوثيقة: | article in journal/newspaper |
| اللغة: | English |
| DOI: | 10.1166/jnn.2020.17554 |
| الإتاحة: | https://doi.org/10.1166/jnn.2020.17554Test https://www.ingentaconnect.com/content/asp/jnn/2020/00000020/00000007/art00014Test |
| رقم الانضمام: | edsbas.9996D6A9 |
| قاعدة البيانات: | BASE |
| DOI: | 10.1166/jnn.2020.17554 |
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