المؤلفون: Bosco, Jeffrey P., Demers, Steven B., Kimball, Gregory M., Lewis, Nathan S., Atwater, Harry A.

المصدر: Journal of Applied Physics, 112(9), Art. No. 093703, (2012-11-01)

مصطلحات موضوعية: binding energy, current density, density functional theory, electronic density of states, II-VI semiconductors, MIS structures, molecular beam epitaxial growth, semiconductor epitaxial layers, valence bands, wide band gap semiconductors, zinc compounds

العلاقة: https://doi.org/10.1063/1.4759280Test; oai:authors.library.caltech.edu:sqej5-2pz27; eprintid:36298; resolverid:CaltechAUTHORS:20130110-104540834

الإتاحة: https://doi.org/10.1063/1.4759280Test

المؤلفون: Fadjie-Djomkam, Alain-Bruno, Ababou-Girard, Soraya, Hiremath, R., Herrier, Cyril, Fabre, Bruno, Solal, Francine, Godet, Christian

المساهمون: Institut de Physique de Rennes (IPR), Université de Rennes (UR)-Centre National de la Recherche Scientifique (CNRS), Institut des Sciences Chimiques de Rennes (ISCR), Université de Rennes (UR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Ecole Nationale Supérieure de Chimie de Rennes (ENSCR)-Institut de Chimie - CNRS Chimie (INC-CNRS)-Centre National de la Recherche Scientifique (CNRS)

المصدر: ISSN: 0021-8979.

مصطلحات موضوعية: silicon, thermionic emission, tunnelling, current density, dangling bonds, electric admittance, elemental semiconductors, MIS devices, molecular electronics, organic compounds, [CHIM.ORGA]Chemical Sciences/Organic chemistry

العلاقة: hal-00658315; https://hal.science/hal-00658315Test; https://hal.science/hal-00658315/documentTest; https://hal.science/hal-00658315/file/JApplPhys_110_083708.pdfTest

الإتاحة: https://doi.org/10.1063/1.3651401Test
https://hal.science/hal-00658315Test
https://hal.science/hal-00658315/documentTest
https://hal.science/hal-00658315/file/JApplPhys_110_083708.pdfTest

المؤلفون: Park, C J, Cho, H Y, Kim, S, Choi, Suk Ho, Elliman, Robert G, Han, J H, Kim, Chungwoo, Hwang, H N, Hwang, C C

المصدر: Journal of Applied Physics ; http://link.aip.org/link/JAPIAU/v99/i3/p036101/s1Test

مصطلحات موضوعية: germanium, elemental semiconductors, nanostructured materials, annealing, MIS structures, ion implantation, hysteresis, photoelectron spectra, transmission electron microscopy, X-ray chemical analysis

وصف الملف: 3 pages

العلاقة: Journal of Applied Physics 99.3 (2006): 036101/1-3; http://hdl.handle.net/10440/1093Test; http://digitalcollections.anu.edu.au/handle/10440/1093Test; https://openresearch-repository.anu.edu.au/bitstream/10440/1093/3/Park_Annealing2006.pdf.jpgTest

الإتاحة: https://doi.org/10.1063/1.2168249Test
http://hdl.handle.net/10440/1093Test
http://digitalcollections.anu.edu.au/handle/10440/1093Test
https://openresearch-repository.anu.edu.au/bitstream/10440/1093/3/Park_Annealing2006.pdf.jpgTest

المؤلفون: Feng, Tao, Yu, Hongbin, Dicken, Matthew, Heath, James R., Atwater, Harry A.

المصدر: Applied Physics Letters, 86(3), Art. No. 033103, (2005-01-17)

مصطلحات موضوعية: silicon compounds, gold, silicon, elemental semiconductors, nanostructured materials, MIS structures, ion implantation, annealing, tunnelling, capacitance, surface topography, MOS memory circuits, transmission electron microscopy, atomic force microscopy, scanning tunnelling microscopy, reflection high energy electron diffraction

العلاقة: https://doi.org/10.1063/1.1852078Test; oai:authors.library.caltech.edu:j279b-tpg28; eprintid:3481; resolverid:CaltechAUTHORS:FENapl05

الإتاحة: https://doi.org/10.1063/1.1852078Test

المؤلفون: Kim, S.-H., Markovich, G., Rezvani, S., Choi, S. H., Wang, K. L., Heath, J. R.

المصدر: Applied Physics Letters, 74(2), 317-319, (1999-01-11)

مصطلحات موضوعية: cadmium compounds, tunnel diodes, MIS devices, nanostructured materials, monolayers, semiconductor thin films, II-VI semiconductors, Coulomb blockade, electric admittance, cryogenic electronics, organic compounds, Langmuir-Blodgett films, molecular electronics

العلاقة: https://doi.org/10.1063/1.123035Test; oai:authors.library.caltech.edu:2pge7-3xm19; eprintid:5593; resolverid:CaltechAUTHORS:KIMapl99

الإتاحة: https://doi.org/10.1063/1.123035Test

المؤلفون: Kumar, Amit, Rosenblum, Mark D., Gilmore, Delwyn L., Tufts, Bruce J., Rosenbluth, Mary L., Lewis, Nathan S.

المصدر: Applied Physics Letters, 56(19), 1919-1921, (1990-05-07)

مصطلحات موضوعية: SEMICONDUCTOR DIODES, FABRICATION, ANODIZATION, PHOTOELECTROCHEMICAL CELLS, CHARGE CARRIERS, SOLAR CELLS, PHOTODIODES, MIS JUNCTIONS, MINORITY CARRIERS

العلاقة: https://doi.org/10.1063/1.103044Test; oai:authors.library.caltech.edu:377b4-kj384; eprintid:2493; resolverid:CaltechAUTHORS:KUMapl90b

الإتاحة: https://doi.org/10.1063/1.103044Test

المؤلفون: Wang, S, Liu, WL, Wan, Q, Dai, J, Lee, PF, Luo, S, Shen, Q, Zhang, M, Song, ZT, Lin, C

المساهمون: Department of Applied Physics, Materials Research Centre

مصطلحات موضوعية: Hafnium compounds, Germanium, Silicon compounds, Silicon, Elemental semiconductors, MIS structures, Nanostructured materials, Electron beam deposition, Leakage currents, Annealing, Transmission electron microscopy, Dielectric thin films, Impurity distribution

العلاقة: http://hdl.handle.net/10397/4880Test; 86; 11; WOS:000228050700085; 2-s2.0-17944373988; r24416; OA_IR/PIRA

الإتاحة: https://doi.org/10.1063/1.1864254Test
http://hdl.handle.net/10397/4880Test

المؤلفون: Yan, F, Hong, Y, Chan, HLW

المساهمون: Department of Applied Physics

مصطلحات موضوعية: MIS devices, Polymer films, Space charge

العلاقة: http://hdl.handle.net/10397/400Test; 92; WOS:000256934900101; 2-s2.0-45749117193; r36799; OA_IR/PIRA

الإتاحة: http://hdl.handle.net/10397/400Test

المؤلفون: Yoshioka, Hironori, Nakamura, Takashi, Kimoto, Tsunenobu

المساهمون: 80225078

مصطلحات موضوعية: capacitance, interface states, MIS structures, MOS capacitors, silicon compounds, surface potential, wide band gap semiconductors

وصف الملف: application/pdf

العلاقة: http://link.aip.org/link/?jap/111/014502Test; http://hdl.handle.net/2433/160637Test; AA00693547; JOURNAL OF APPLIED PHYSICS; 111; 014502

الإتاحة: http://hdl.handle.net/2433/160637Test

المؤلفون: Takashi Nakamura, Tsunenobu Kimoto, Hironori Yoshioka

المصدر: JOURNAL OF APPLIED PHYSICS. 111(1)

مصطلحات موضوعية: Surface (mathematics), MOS capacitors, Materials science, surface potential, wide band gap semiconductors, Interface (computing), capacitance, interface states, Wide-bandgap semiconductor, Analytical chemistry, General Physics and Astronomy, Capacitance, Molecular physics, MIS structures, law.invention, Metal, Capacitor, law, visual_art, visual_art.visual_art_medium, Specific energy, silicon compounds, Energy (signal processing)

وصف الملف: application/pdf

الوصول الحر: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::26ca77512c1747c8863712b91dda2fedTest
http://hdl.handle.net/2433/160637Test