المؤلفون: Im, S., Song, J. H., Lie, D. Y. C., Eisen, F., Atwater, H., Nicolet, M.-A.

المصدر: Journal of Applied Physics, 81(4), 1700-1703, (1997-02-15)

مصطلحات موضوعية: GERMANIUM SILICIDES, ION IMPLANTATION, CARBON IONS, KEV RANGE 100-1000, ION CHANNELING, X-RAY DIFFRACTION, ANNEALING, CHEMICAL COMPOSITION, STRAINS, Ge-Si alloys, carbon, semiconductor doping, semiconductor materials, Rutherford backscattering, amorphous semiconductors

العلاقة: https://doi.org/10.1063/1.364027Test; oai:authors.library.caltech.edu:thk04-k4p52; eprintid:1352; resolverid:CaltechAUTHORS:IMSjap97

الإتاحة: https://doi.org/10.1063/1.364027Test

المؤلفون: Bae, H. S., Kim, T. G., Whang, C. N., Im, S., Yun, J. S., Song, J. H.

المصدر: Journal of Applied Physics; 4/1/2002, Vol. 91 Issue 7, p4078, 4p, 3 Diagrams, 2 Graphs

مصطلحات موضوعية: LUMINESCENCE, SILICON oxide, ELECTROLUMINESCENCE

المؤلفون: Im, S., Jin, B. J., Yi, S.

المصدر: Journal of Applied Physics. 5/1/2000, Vol. 87 Issue 9, p4558. 4p. 1 Black and White Photograph, 1 Diagram, 3 Graphs.

مصطلحات موضوعية: *ZINC oxide, *THIN films, *SAPPHIRES, *ULTRAVIOLET radiation

المؤلفون: Im, S., Eisen, F., Nicolet, M.-A., Tanner, M. O., Wang, K. L., Theodore, N. D.

المصدر: Journal of Applied Physics. 2/15/1997, Vol. 81 Issue 4, p1695. 5p.

مصطلحات موضوعية: *GERMANIUM compounds, *MOLECULAR beam epitaxy, *PSEUDOMORPHS

المؤلفون: Lie, D. Y. C., Im, S., Nicolet, M.-A., Theodore, N. D.

المصدر: Journal of Applied Physics. 6/1/1996, Vol. 79 Issue 11, p8341. 8p. 1 Black and White Photograph, 3 Graphs.

مصطلحات موضوعية: *ION implantation, *STRAINS & stresses (Mechanics), *DOPED semiconductors

المؤلفون: Im, S., Song, J. H., Lie, D. Y. C., Eisen, F., Atwater, H., Nicolet, M.-A.

المصدر: Journal of Applied Physics; 2/15/1997, Vol. 81 Issue 4, p1700, 4p

مصطلحات موضوعية: SILICON compounds, GERMANIUM compounds, BACKSCATTERING, CHANNELING (Physics)

المؤلفون: Sung, M. C., You, D. G., Park, H. S., Lee, J. C., Ie, S. Y., Kim, I. S., Lee, J., Whang, C. N., Im, S., Jeong, K., Kim, T. G., Yang, J. S., Song, J. H.

المصدر: Journal of Applied Physics; 8/15/2001, Vol. 90 Issue 4, p2036, 3p, 3 Graphs

مصطلحات موضوعية: EPITAXY, ANISOTROPY, IRRADIATION, COPPER

المؤلفون: Im, S., Lie, D. Y. C., Nicolet, M.-A.

المصدر: Journal of Applied Physics. 5/1/1996, Vol. 79 Issue 9, p7389. 3p. 3 Graphs.

مصطلحات موضوعية: *HETEROSTRUCTURES, *CHEMICAL vapor deposition, *ION implantation

المؤلفون: Lee, W. T., Im, S. J., Lee, D. Y., Yu, SeGi, Kim, J. M., Han, J. G., Lee, J. W., Choi, E. H.

المصدر: Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures; 2003, Vol. 21 Issue 3, p1092-1098, 7p

المؤلفون: Choi, Y. S., Lee, J. Y., Im, S., Lee, S. J.

المصدر: Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures; 2002, Vol. 20 Issue 6, p2384-2387, 4p