دورية أكاديمية
Thermally stable AuGe-Au ohmic contacts for single doped InP high electron mobility transistor structures.
| العنوان: | Thermally stable AuGe-Au ohmic contacts for single doped InP high electron mobility transistor structures. |
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| المؤلفون: | McTaggart, R. A., Hur, K. Y., Lemonias, P. J., Hoke, W. E., Aucoin, L. M. |
| المصدر: | Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures; 1995, Vol. 13 Issue 1, p163-165, 3p |
| قاعدة البيانات: | Complementary Index |
| تدمد: | 10711023 |
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| DOI: | 10.1116/1.587977 |