التفاصيل البيبلوغرافية
| العنوان: |
α-Ga2O3 on insulator field-effect transistors with drain currents exceeding 1.5A/mm and their self-heating effect. |
| المؤلفون: |
Hong Zhou1, Maize, Kerry1, Gang Qiu1, Shakouri, Ali1, Yea, Peide D.1 yep@purdue.edu |
| المصدر: |
Applied Physics Letters. 8/28/2017, Vol. 111 Issue 9, p1-4. 4p. |
| مصطلحات موضوعية: |
*FIELD-effect transistors, *FIELD-effect devices, *TRANSISTORS, *CURRENT density (Electromagnetism), *ELECTRIC currents |
| مستخلص: |
We have demonstrated that depletion/enhancement-mode α-Ga2O3 on insulator field-effect transistors can achieve a record high drain current density of 1.5/1.0 A/mm by utilizing a highly doped α-Ga2O3 nano-membrane as the channel. α-Ga2O3 on insulator field-effect transistor (GOOI FET) shows a high on/off ratio of 1010 and low subthreshold slope of 150 mV/dec even with 300 nm thick SiO2. The enhancement-mode GOOI FET is achieved through surface depletion. An ultra-fast, high resolution thermo-reflectance imaging technique is applied to study the self-heating effect by directly measuring the local surface temperature. High drain current, low Rc, and wide bandgap make the α-Ga2O3 on insulator field-effect transistor a promising candidate for future power electronics applications. [ABSTRACT FROM AUTHOR] |
| قاعدة البيانات: |
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