Defect passivation of transition metal dichalcogenides via a charge transfer van der Waals interface
| العنوان: | Defect passivation of transition metal dichalcogenides via a charge transfer van der Waals interface |
|---|---|
| المؤلفون: | Atresh Sanne, Jun Hong Park, Matin Amani, Sanjay K. Banerjee, Ali Javey, Hema C. P. Movva, Kehao Zhang, John Robertson, Andrew C. Kummel, Yuzheng Guo, Joshua A. Robinson |
| المصدر: | Science Advances |
| بيانات النشر: | American Association for the Advancement of Science (AAAS), 2017. |
| سنة النشر: | 2017 |
| مصطلحات موضوعية: | Materials science, Passivation, Nanotechnology, 02 engineering and technology, 010402 general chemistry, 01 natural sciences, Ion, law.invention, symbols.namesake, law, Monolayer, Molecule, Research Articles, Multidisciplinary, business.industry, SciAdv r-articles, 021001 nanoscience & nanotechnology, 0104 chemical sciences, Semiconductor, Chemical physics, Physical Sciences, symbols, Density functional theory, van der Waals force, Scanning tunneling microscope, 0210 nano-technology, business, Research Article, Surface Chemistry |
| الوصف: | Adsorption of organic molecules passivates defect states on single-layer MoS2 via charge transfer. Integration of transition metal dichalcogenides (TMDs) into next-generation semiconductor platforms has been limited due to a lack of effective passivation techniques for defects in TMDs. The formation of an organic-inorganic van der Waals interface between a monolayer (ML) of titanyl phthalocyanine (TiOPc) and a ML of MoS2 is investigated as a defect passivation method. A strong negative charge transfer from MoS2 to TiOPc molecules is observed in scanning tunneling microscopy. As a result of the formation of a van der Waals interface, the ION/IOFF in back-gated MoS2 transistors increases by more than two orders of magnitude, whereas the degradation in the photoluminescence signal is suppressed. Density functional theory modeling reveals a van der Waals interaction that allows sufficient charge transfer to remove defect states in MoS2. The present organic-TMD interface is a model system to control the surface/interface states in TMDs by using charge transfer to a van der Waals bonded complex. |
| اللغة: | English |
| الوصول الحر: | https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fcaf02b6ec1b79d982e214c51e7bc0fcTest https://cronfa.swan.ac.uk/Record/cronfa37808/Download/0037808-03012018102421.pdfTest |
| حقوق: | OPEN |
| رقم الانضمام: | edsair.doi.dedup.....fcaf02b6ec1b79d982e214c51e7bc0fc |
| قاعدة البيانات: | OpenAIRE |
| الوصف غير متاح. |