دورية أكاديمية
Electric field effect on the artificial grain boundary of bicrystal YBa2Cu3O7−δ films
| العنوان: | Electric field effect on the artificial grain boundary of bicrystal YBa2Cu3O7−δ films |
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| المؤلفون: | Nakajima, Kensuke, Yokota, Kazuki, Myoren, Hiroaki, Chen, Jian, Yamashita, Tsutomu |
| المصدر: | Applied Physics Letters ; volume 63, issue 5, page 684-686 ; ISSN 0003-6951 1077-3118 |
| بيانات النشر: | AIP Publishing |
| سنة النشر: | 1993 |
| مصطلحات موضوعية: | Physics and Astronomy (miscellaneous) |
| الوصف: | An ability of the artificial grain boundary of bicrystal YBa2Cu3O7−δ thin films is demonstrated as the field effect channel of high Tc field effect devices. The influence of field application on the channel resistance is examined with a metal-insulator-semiconductor-type structure, in which a channel is arranged across the grain boundary. The field-induced change in the resistance of the grain boundary is enhanced up to around 5% by lowering temperature below Tc of adjoining YBa2Cu3O7−δ grains. The enhancement is explained not only by an increase in the dielectric constant of the gate insulator (SrTiO3) but also by a reduction in the carrier density nearby the grain boundary. The latter is indeed a benefit to high Tc field effect devices. |
| نوع الوثيقة: | article in journal/newspaper |
| اللغة: | English |
| DOI: | 10.1063/1.109929 |
| الإتاحة: | https://doi.org/10.1063/1.109929Test https://pubs.aip.org/aip/apl/article-pdf/63/5/684/18497005/684_1_online.pdfTest |
| رقم الانضمام: | edsbas.31C8B9B0 |
| قاعدة البيانات: | BASE |
| DOI: | 10.1063/1.109929 |
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