Deposition of thermally stable, low dielectric constant fluorocarbon/SiO2 composite thin film
| العنوان: | Deposition of thermally stable, low dielectric constant fluorocarbon/SiO2 composite thin film |
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| المؤلفون: | Dong S. Kim, Young H. Lee, Nae‐Hak Park |
| المصدر: | Applied Physics Letters. 69:2776-2778 |
| بيانات النشر: | AIP Publishing, 1996. |
| سنة النشر: | 1996 |
| مصطلحات موضوعية: | Hexamethyldisiloxane, Materials science, Argon, Physics and Astronomy (miscellaneous), chemistry.chemical_element, Dielectric, Amorphous solid, chemistry.chemical_compound, Monomer, chemistry, Chemical engineering, Organic chemistry, Thermal stability, Fluorocarbon, Thin film |
| الوصف: | Low dielectric fluorocarbon/SiO2 composite films are developed that exhibit good thermal stability and low dielectric constant by using hexamethyldisiloxane (HMDSO) and prefluorobenzene (C6F6) as the monomer source gases, and argon and oxygen as the carrier gases in a dual frequency, inductively‐coupled high‐density plasma reactor. Fourier transform infrared measurements of the films show that they consisted of both SiO2 and amorphous perfluoro tetra fluoroethylene, and the amount of each can be controlled by changing the feed monomer gas ratio. The dielectric constant of the film ranges between 2 and 4 depending on the feed monomer gas ratio. For example, when the monomer gas ratio [HMDSO/(HMDSO+C6F6)] is 0.2, the dielectric constant of the film is ∼2.5. Such a composite film shows good thermal stability and good adhesion on a silicon substrate. |
| تدمد: | 1077-3118 0003-6951 |
| الوصول الحر: | https://explore.openaire.eu/search/publication?articleId=doi_________::4f23ba34056fdc4c2353874a70648ac5Test https://doi.org/10.1063/1.117672Test |
| رقم الانضمام: | edsair.doi...........4f23ba34056fdc4c2353874a70648ac5 |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 10773118 00036951 |
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