المؤلفون: Zhao, Weisheng, Zhang, Y, Klein, Jacques-Olivier, Querlioz, Damien, S, Ravelosona, Dafine, Chappert, Claude, Portal, Jean-Michel, Bocquet, Marc, Aziza, Hassen, Deleruyelle, Damien, Muller, Christophe

المساهمون: Institut d'électronique fondamentale (IEF), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (IM2NP), Aix Marseille Université (AMU)-Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS)

المصدر: 2012 IEEE/ACM International Symposium on Nanoscale Architectures
https://hal.science/hal-01745351Test
2012 IEEE/ACM International Symposium on Nanoscale Architectures , Jul 2012, Amsterdam, Netherlands. ⟨10.1145/2765491.2765508⟩

مصطلحات موضوعية: Crossbar, Resistive Switching, complementary cell, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics

جغرافية الموضوع: Amsterdam, Netherlands

العلاقة: hal-01745351; https://hal.science/hal-01745351Test; https://hal.science/hal-01745351/documentTest; https://hal.science/hal-01745351/file/%5BZhao12-Nanoarch%5D%20Crossbar%20Architecture%20Based%20on%202R%20Complementary%20Resistive%20Switching%20Memory%20Cell.pdfTest

الإتاحة: https://doi.org/10.1145/2765491.2765508Test
https://hal.science/hal-01745351Test
https://hal.science/hal-01745351/documentTest
https://hal.science/hal-01745351/file/%5BZhao12-Nanoarch%5D%20Crossbar%20Architecture%20Based%20on%202R%20Complementary%20Resistive%20Switching%20Memory%20Cell.pdfTest

المؤلفون: Zhao, Weisheng, Zhang, Y, Klein, Jacques-Olivier, Querlioz, Damien, S, Ravelosona, Dafine, Chappert, Claude, Portal, Jean-Michel, Bocquet, Marc, Aziza, Hassen, Deleruyelle, Damien, Muller, Christophe

المساهمون: Institut d'électronique fondamentale (IEF), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (IM2NP), Aix Marseille Université (AMU)-Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS)

المصدر: 2012 IEEE/ACM International Symposium on Nanoscale Architectures
https://hal.science/hal-01745351Test
2012 IEEE/ACM International Symposium on Nanoscale Architectures , Jul 2012, Amsterdam, Netherlands. ⟨10.1145/2765491.2765508⟩

مصطلحات موضوعية: Crossbar, Resistive Switching, complementary cell, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics

جغرافية الموضوع: Amsterdam, Netherlands

العلاقة: hal-01745351; https://hal.science/hal-01745351Test; https://hal.science/hal-01745351/documentTest; https://hal.science/hal-01745351/file/%5BZhao12-Nanoarch%5D%20Crossbar%20Architecture%20Based%20on%202R%20Complementary%20Resistive%20Switching%20Memory%20Cell.pdfTest

الإتاحة: https://doi.org/10.1145/2765491.2765508Test
https://hal.science/hal-01745351Test
https://hal.science/hal-01745351/documentTest
https://hal.science/hal-01745351/file/%5BZhao12-Nanoarch%5D%20Crossbar%20Architecture%20Based%20on%202R%20Complementary%20Resistive%20Switching%20Memory%20Cell.pdfTest

المؤلفون: Zhao, Weisheng, Zhang, Y, Klein, Jacques-Olivier, Querlioz, Damien, S, Ravelosona, Dafine, Chappert, Claude, Portal, Jean-Michel, Bocquet, Marc, Aziza, Hassen, Deleruyelle, Damien, Muller, Christophe

المساهمون: Institut d'électronique fondamentale (IEF), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (IM2NP), Aix Marseille Université (AMU)-Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS)

المصدر: 2012 IEEE/ACM International Symposium on Nanoscale Architectures
https://hal.science/hal-01745351Test
2012 IEEE/ACM International Symposium on Nanoscale Architectures , Jul 2012, Amsterdam, Netherlands. ⟨10.1145/2765491.2765508⟩

مصطلحات موضوعية: Crossbar, Resistive Switching, complementary cell, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics

جغرافية الموضوع: Amsterdam, Netherlands

العلاقة: hal-01745351; https://hal.science/hal-01745351Test; https://hal.science/hal-01745351/documentTest; https://hal.science/hal-01745351/file/%5BZhao12-Nanoarch%5D%20Crossbar%20Architecture%20Based%20on%202R%20Complementary%20Resistive%20Switching%20Memory%20Cell.pdfTest

الإتاحة: https://doi.org/10.1145/2765491.2765508Test
https://hal.science/hal-01745351Test
https://hal.science/hal-01745351/documentTest
https://hal.science/hal-01745351/file/%5BZhao12-Nanoarch%5D%20Crossbar%20Architecture%20Based%20on%202R%20Complementary%20Resistive%20Switching%20Memory%20Cell.pdfTest

المؤلفون: Zhao, Weisheng, Zhang, Y, Klein, Jacques-Olivier, Querlioz, Damien, S, Ravelosona, Dafine, Chappert, Claude, Portal, Jean-Michel, Bocquet, Marc, Aziza, Hassen, Deleruyelle, Damien, Muller, Christophe

المساهمون: Institut d'électronique fondamentale (IEF), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (IM2NP), Aix Marseille Université (AMU)-Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS)

المصدر: 2012 IEEE/ACM International Symposium on Nanoscale Architectures
https://hal.science/hal-01745351Test
2012 IEEE/ACM International Symposium on Nanoscale Architectures , Jul 2012, Amsterdam, Netherlands. ⟨10.1145/2765491.2765508⟩

مصطلحات موضوعية: Crossbar, Resistive Switching, complementary cell, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics

جغرافية الموضوع: Amsterdam, Netherlands

العلاقة: hal-01745351; https://hal.science/hal-01745351Test; https://hal.science/hal-01745351/documentTest; https://hal.science/hal-01745351/file/%5BZhao12-Nanoarch%5D%20Crossbar%20Architecture%20Based%20on%202R%20Complementary%20Resistive%20Switching%20Memory%20Cell.pdfTest

الإتاحة: https://doi.org/10.1145/2765491.2765508Test
https://hal.science/hal-01745351Test
https://hal.science/hal-01745351/documentTest
https://hal.science/hal-01745351/file/%5BZhao12-Nanoarch%5D%20Crossbar%20Architecture%20Based%20on%202R%20Complementary%20Resistive%20Switching%20Memory%20Cell.pdfTest

المؤلفون: Zhao, Weisheng, Zhang, Y, Klein, Jacques-Olivier, Querlioz, Damien, Ravelosona, Dafine, Chappert, Claude, Portal, Jean-Michel, Bocquet, Marc, Aziza, Hassen, Deleruyelle, Damien, Muller, Christophe

المساهمون: Institut d'électronique fondamentale (IEF), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (IM2NP), Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS)-Aix Marseille Université (AMU)

المصدر: 2012 IEEE/ACM International Symposium on Nanoscale Architectures
https://hal.archives-ouvertes.fr/hal-01745351Test
2012 IEEE/ACM International Symposium on Nanoscale Architectures , Jul 2012, Amsterdam, Netherlands. ⟨10.1145/2765491.2765508⟩

مصطلحات موضوعية: Crossbar, Resistive Switching, complementary cell, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics

جغرافية الموضوع: Amsterdam, Netherlands

العلاقة: hal-01745351; https://hal.archives-ouvertes.fr/hal-01745351Test; https://hal.archives-ouvertes.fr/hal-01745351/documentTest; https://hal.archives-ouvertes.fr/hal-01745351/file/%5BZhao12-Nanoarch%5D%20Crossbar%20Architecture%20Based%20on%202R%20Complementary%20Resistive%20Switching%20Memory%20Cell.pdfTest

الإتاحة: https://doi.org/10.1145/2765491.2765508Test
https://hal.archives-ouvertes.fr/hal-01745351Test
https://hal.archives-ouvertes.fr/hal-01745351/documentTest
https://hal.archives-ouvertes.fr/hal-01745351/file/%5BZhao12-Nanoarch%5D%20Crossbar%20Architecture%20Based%20on%202R%20Complementary%20Resistive%20Switching%20Memory%20Cell.pdfTest

المؤلفون: Zhao, Weisheng, Zhang, Y, Klein, Jacques-Olivier, Querlioz, Damien, Ravelosona, Dafine, Chappert, Claude, Portal, Jean-Michel, Bocquet, Marc, Aziza, Hassen, Deleruyelle, Damien, Muller, Christophe

المساهمون: Institut d'électronique fondamentale (IEF), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (IM2NP), Aix Marseille Université (AMU)-Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS)

المصدر: 2012 IEEE/ACM International Symposium on Nanoscale Architectures
https://hal.science/hal-01745351Test
2012 IEEE/ACM International Symposium on Nanoscale Architectures , Jul 2012, Amsterdam, Netherlands. ⟨10.1145/2765491.2765508⟩

مصطلحات موضوعية: Crossbar, Resistive Switching, complementary cell, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, archi, envir

جغرافية الموضوع: Amsterdam, Netherlands

العلاقة: https://hal.science/hal-01745351/file/%5BZhao12-Nanoarch%5D%20Crossbar%20Architecture%20Based%20on%202R%20Complementary%20Resistive%20Switching%20Memory%20Cell.pdfTest; https://hal.science/hal-01745351Test

الإتاحة: https://doi.org/10.1145/2765491.2765508Test
https://hal.science/hal-01745351/file/%5BZhao12-Nanoarch%5D%20Crossbar%20Architecture%20Based%20on%202R%20Complementary%20Resistive%20Switching%20Memory%20Cell.pdfTest
https://hal.science/hal-01745351Test

المؤلفون: Zhao, Weisheng, Zhang, Y, Klein, Jacques-Olivier, Querlioz, Damien, Ravelosona, Dafine, Chappert, Claude, Portal, Jean-Michel, Bocquet, Marc, Aziza, Hassen, Deleruyelle, Damien, Muller, Christophe

المساهمون: Institut d'électronique fondamentale (IEF), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (IM2NP), Aix Marseille Université (AMU)-Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS)

المصدر: 2012 IEEE/ACM International Symposium on Nanoscale Architectures
https://hal.science/hal-01745351Test
2012 IEEE/ACM International Symposium on Nanoscale Architectures , Jul 2012, Amsterdam, Netherlands. ⟨10.1145/2765491.2765508⟩

مصطلحات موضوعية: Crossbar, Resistive Switching, complementary cell, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, archi, envir

جغرافية الموضوع: Amsterdam, Netherlands

العلاقة: https://hal.science/hal-01745351/file/%5BZhao12-Nanoarch%5D%20Crossbar%20Architecture%20Based%20on%202R%20Complementary%20Resistive%20Switching%20Memory%20Cell.pdfTest; https://hal.science/hal-01745351Test

الإتاحة: https://doi.org/10.1145/2765491.2765508Test
https://hal.science/hal-01745351/file/%5BZhao12-Nanoarch%5D%20Crossbar%20Architecture%20Based%20on%202R%20Complementary%20Resistive%20Switching%20Memory%20Cell.pdfTest
https://hal.science/hal-01745351Test

المؤلفون: Zhao, Weisheng, Zhang, Y, Klein, Jacques-Olivier, Querlioz, Damien, Ravelosona, Dafine, Chappert, Claude, Portal, Jean-Michel, Bocquet, Marc, Aziza, Hassen, Deleruyelle, Damien, Muller, Christophe

المساهمون: Institut d'électronique fondamentale (IEF), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (IM2NP), Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS)-Aix Marseille Université (AMU)

المصدر: 2012 IEEE/ACM International Symposium on Nanoscale Architectures
https://hal.archives-ouvertes.fr/hal-01745351Test
2012 IEEE/ACM International Symposium on Nanoscale Architectures , Jul 2012, Amsterdam, Netherlands. ⟨10.1145/2765491.2765508⟩

مصطلحات موضوعية: Crossbar, Resistive Switching, complementary cell, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, archi, envir

جغرافية الموضوع: Amsterdam, Netherlands

العلاقة: https://hal.archives-ouvertes.fr/hal-01745351/file/%5BZhao12-Nanoarch%5D%20Crossbar%20Architecture%20Based%20on%202R%20Complementary%20Resistive%20Switching%20Memory%20Cell.pdfTest; https://hal.archives-ouvertes.fr/hal-01745351Test

الإتاحة: https://doi.org/10.1145/2765491.2765508Test
https://hal.archives-ouvertes.fr/hal-01745351/file/%5BZhao12-Nanoarch%5D%20Crossbar%20Architecture%20Based%20on%202R%20Complementary%20Resistive%20Switching%20Memory%20Cell.pdfTest
https://hal.archives-ouvertes.fr/hal-01745351Test

المؤلفون: Zhao, Weisheng, Zhang, Y, Klein, Jacques-Olivier, Querlioz, Damien, Ravelosona, Dafine, Chappert, Claude, Portal, Jean-Michel, Bocquet, Marc, Aziza, Hassen, Deleruyelle, Damien, Muller, Christophe

المساهمون: Institut d'électronique fondamentale (IEF), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (IM2NP), Aix Marseille Université (AMU)-Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS)

المصدر: 2012 IEEE/ACM International Symposium on Nanoscale Architectures
https://hal.science/hal-01745351Test
2012 IEEE/ACM International Symposium on Nanoscale Architectures , Jul 2012, Amsterdam, Netherlands. ⟨10.1145/2765491.2765508⟩

مصطلحات موضوعية: Crossbar, Resistive Switching, complementary cell, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, archi, envir

جغرافية الموضوع: Amsterdam, Netherlands

العلاقة: https://hal.science/hal-01745351/file/%5BZhao12-Nanoarch%5D%20Crossbar%20Architecture%20Based%20on%202R%20Complementary%20Resistive%20Switching%20Memory%20Cell.pdfTest; https://hal.science/hal-01745351Test

الإتاحة: https://doi.org/10.1145/2765491.2765508Test
https://hal.science/hal-01745351/file/%5BZhao12-Nanoarch%5D%20Crossbar%20Architecture%20Based%20on%202R%20Complementary%20Resistive%20Switching%20Memory%20Cell.pdfTest
https://hal.science/hal-01745351Test