المؤلفون: Xinhua Wang (286425), Yange Zhang (2031409), Sen Huang (5374796), Haibo Yin (1530037), Jie Fan (258204), Ke Wei (192091), Yingkui Zheng (5374799), Wenwu Wang (4352767), Haojie Jiang (3341594), Xuebang Wu (2367448), Xianping Wang (519946), Changsong Liu (2151742), Xinyu Liu (34266)

مصطلحات موضوعية: Biochemistry, Inorganic Chemistry, Chemical Sciences not elsewhere classified, chemical components, GaN, ultrathin layer, high-energy-activated Ga 2 O, Si 2 N 2 O, 1 ML θ- Ga 2 O 3 transition interface, formation mechanism, Low-density states, SiN x Grown, SiN x, Partially Crystallized Ultrathin In., mass action equation, X-ray photoelectron spectroscopy, depth profile analysis, Low-Pressure Chemical Vapor Deposition, interface supercell slabs, Interface Editing, energy changes, feasibility analysis

العلاقة: https://figshare.com/articles/journal_contribution/Partially_Crystallized_Ultrathin_Interfaces_between_GaN_and_SiN_i_sub_x_sub_i_Grown_by_Low-Pressure_Chemical_Vapor_Deposition_and_Interface_Editing/13697302Test

الإتاحة: https://doi.org/10.1021/acsami.0c19483.s001Test

المؤلفون: Tiwat, Pongthavornkamol, Guoguo, Liu, Tingting, Yuan, Yingkui, Zheng, Xinyu, Liu

المصدر: Journal of Semiconductors ; volume 37, issue 6, page 064008 ; ISSN 1674-4926

الإتاحة: https://doi.org/10.1088/1674-4926/37/6/064008Test
http://stacks.iop.org/1674-4926/37/i=6/a=064008/pdfTest
http://stacks.iop.org/1674-4926/37/i=6/a=064008?key=crossref.17248c7d02b50412cf8937cc49953712Test

المؤلفون: Sen Huang, Xinyu Liu, Jinhan Zhang, Ke Wei, Guoguo Liu, Xinhua Wang, Yingkui Zheng, Honggang Liu, Zhi Jin, Chao Zhao, Cheng Liu, Shenghou Liu, Shu Yang, Jincheng Zhang, Yue Hao, Chen, Kevin J.

المساهمون: Innovation and Technology Commission, Hong Kong, National Natural Science Foundation of China, Opening Project of Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences

المصدر: IEEE Electron Device Letters ; volume 36, issue 8, page 754-756 ; ISSN 0741-3106 1558-0563

مصطلحات موضوعية: Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials

الإتاحة: https://doi.org/10.1109/led.2015.2445353Test
http://xplorestaging.ieee.org/ielx7/55/7164361/07123580.pdf?arnumber=7123580Test

المؤلفون: Zhao, Miao, Liu, Xinyu, Yingkui, Zheng, Wei, Ke, Mingzeng, Peng, Yankui, Li, Guoguo, Liu

المصدر: 2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits

الإتاحة: https://doi.org/10.1109/ipfa.2012.6306275Test
http://xplorestaging.ieee.org/ielx5/6296434/6306244/06306275.pdf?arnumber=6306275Test

المؤلفون: Xinhua Wang, Sen Huang, Yingkui Zheng, Ke Wei, Xiaojuan Chen, Haoxiang Zhang, Xinyu Liu

المساهمون: Knowledge Innovation Program of Chinese Academy of Sciences

المصدر: IEEE Transactions on Electron Devices ; volume 61, issue 5, page 1341-1346 ; ISSN 0018-9383 1557-9646

الإتاحة: https://doi.org/10.1109/ted.2014.2312232Test
http://xplorestaging.ieee.org/ielx7/16/6802373/06782654.pdf?arnumber=6782654Test

المؤلفون: Yingkui Zheng, Zhijing He, Dexin Wu

المصدر: 2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443)

الإتاحة: https://doi.org/10.1109/icsict.2001.982148Test
http://xplorestaging.ieee.org/ielx5/7712/21145/00982148.pdf?arnumber=982148Test

المؤلفون: Xinhua, Wang, Miao, Zhao, Xinyu, Liu, Yingkui, Zheng, Ke, Wei

المصدر: Journal of Semiconductors ; volume 31, issue 7, page 074005 ; ISSN 1674-4926

الإتاحة: https://doi.org/10.1088/1674-4926/31/7/074005Test

المؤلفون: Tingting, Yuan, Xinyu, Liu, Yingkui, Zheng, Chengzhan, Li, Ke, Wei, Guoguo, Liu

المصدر: Journal of Semiconductors ; volume 30, issue 12, page 124001 ; ISSN 1674-4926

الإتاحة: https://doi.org/10.1088/1674-4926/30/12/124001Test

المؤلفون: Lei, Pang, Yan, Pu, Xinyu, Liu, Liang, Wang, Chengzhan, Li, Jian, Liu, Yingkui, Zheng, Ke, Wei

المصدر: Journal of Semiconductors ; volume 30, issue 5, page 054001 ; ISSN 1674-4926

الإتاحة: https://doi.org/10.1088/1674-4926/30/5/054001Test