التفاصيل البيبلوغرافية
| العنوان: |
Generation of dislocations from scratches on GaN formed during wafer fabrication and dislocation reactions during homoepitaxial growth |
| المؤلفون: |
Ishikawa, Yukari, Sugawara, Yoshihiro, Yao, Yongzhao, Noguchi, Naoto, Takeda, Yukihisa, Yamada, Hisashi, Shimizu, Mitsuaki, Tadatomo, Kazuyuki |
| المساهمون: |
Japan Society for the Promotion of Science, “Knowledge Hub Aichi” Priority Research Project from Aichi Prefectural Government III, Kazuchika Okura Memorial Foundation |
| المصدر: |
Japanese Journal of Applied Physics ; volume 60, issue 11, page 115501 ; ISSN 0021-4922 1347-4065 |
| بيانات النشر: |
IOP Publishing |
| سنة النشر: |
2021 |
| نوع الوثيقة: |
article in journal/newspaper |
| اللغة: |
unknown |
| DOI: |
10.35848/1347-4065/ac2ae5 |
| DOI: |
10.35848/1347-4065/ac2ae5/pdf |
| الإتاحة: |
https://doi.org/10.35848/1347-4065/ac2ae5Test |
| حقوق: |
https://iopscience.iop.org/page/copyrightTest ; https://iopscience.iop.org/info/page/text-and-data-miningTest |
| رقم الانضمام: |
edsbas.CA9FD99D |
| قاعدة البيانات: |
BASE |
