دورية أكاديمية
Highly transparent low capacitance plasma enhanced atomic layer deposition Al2O3-HfO2 tunnel junction engineering
| العنوان: | Highly transparent low capacitance plasma enhanced atomic layer deposition Al2O3-HfO2 tunnel junction engineering |
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| المؤلفون: | El Hajjam, Khalil, Baboux, Nicolas, Calmon, Francis, Souifi, Abdelkader, Poncelet, Olivier, Francis, Laurent, Ecoffey, Serge, Drouin, Dominique |
| المساهمون: | UCL - SST/ICTM/ELEN - Pôle en ingénierie électrique |
| المصدر: | Journal of Vacuum Science and Technology. Part A. Vacuum, Surfaces and Films, Vol. 32, no.1, p. 01A132 - 01A132-6 (01/2014) |
| بيانات النشر: | American Institute of Physics |
| سنة النشر: | 2014 |
| المجموعة: | DIAL@UCL (Université catholique de Louvain) |
| الوصف: | The development of metallic single electron transistor (SET) depends on the downscaling and the electrical properties of its tunnel junctions. These tunnel junctions should insure high tunnel current levels, low thermionic current, and low capacitance. The authors use atomic layer deposition to fabricate Al2O3 and HfO2 thin layers. Tunnel barrier engineering allows the achievement of low capacitance Al2O3 and HfO2 tunnel junctions using optimized annealing and plasma exposure conditions. Different stacks were designed and fabricated to increase the transparency of the tunnel junction while minimizing thermionic current. This tunnel junction is meant to be integrated in SET to enhance its electrical properties (e.g., operating temperature, I ON/I OFF ratio). |
| نوع الوثيقة: | article in journal/newspaper |
| اللغة: | Ndonga |
| تدمد: | 0734-2101 |
| العلاقة: | boreal:140671; http://hdl.handle.net/2078.1/140671Test; urn:ISSN:0734-2101 |
| DOI: | 10.1116/1.4853075 |
| الإتاحة: | https://doi.org/10.1116/1.4853075Test http://hdl.handle.net/2078.1/140671Test |
| حقوق: | info:eu-repo/semantics/restrictedAccess |
| رقم الانضمام: | edsbas.84AFEA8E |
| قاعدة البيانات: | BASE |
| تدمد: | 07342101 |
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| DOI: | 10.1116/1.4853075 |