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المؤلفون: Laurent Pichon, Emmanuel Jacques, Olivier Bonnaud, Peng Zhang, Régis Rogel
المساهمون: Nanjing University of Posts and Telecommunications, Institut d'Électronique et des Technologies du numéRique (IETR), Nantes Université (NU)-Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS), Natural Science Foundation of Jiangsu Province BK20180762, Université de Nantes (UN)-Université de Rennes (UR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS), Université de Nantes (UN)-Université de Rennes 1 (UR1)
المصدر: Solid-State Electronics
Solid-State Electronics, Elsevier, 2020, 171, pp.107798. ⟨10.1016/j.sse.2020.107798⟩
Solid-State Electronics, 2020, 171, pp.107798. ⟨10.1016/j.sse.2020.107798⟩مصطلحات موضوعية: Materials science, Low-temperature polycrystalline silicon, 02 engineering and technology, engineering.material, 01 natural sciences, Etching (microfabrication), 0103 physical sciences, Materials Chemistry, Electrical and Electronic Engineering, 010302 applied physics, Plasma etching, business.industry, Low temperature polycrystalline silicon, Density of states, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Subthreshold slope, Electronic, Optical and Magnetic Materials, Vertical thin film transistors, [SPI.TRON]Engineering Sciences [physics]/Electronics, Polycrystalline silicon, Thin-film transistor, Conduction modeling, engineering, Optoelectronics, 0210 nano-technology, business, Current density
الوصول الحر: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::112812de4d28091446b14a21b9cbeb1dTest
https://hal.archives-ouvertes.fr/hal-02891811Test -
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المؤلفون: Zijian Chen, Zenghong Ma, Lian Zhang, Shiyu Wang
المصدر: Applied Sciences, Vol 9, Iss 20, p 4468 (2019)
Applied Sciences
Volume 9
Issue 20مصطلحات موضوعية: Materials science, Aperture, color discrimination, 02 engineering and technology, engineering.material, 01 natural sciences, lcsh:Technology, Collimated light, law.invention, 010309 optics, lcsh:Chemistry, Optics, law, 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, General Materials Science, Instrumentation, lcsh:QH301-705.5, Fluid Flow and Transfer Processes, business.industry, lcsh:T, Process Chemistry and Technology, General Engineering, polycrystalline silicon cell, Laser, lcsh:QC1-999, Computer Science Applications, Lens (optics), Wavelength, Light intensity, Optical power meter, Polycrystalline silicon, lcsh:Biology (General), lcsh:QD1-999, lcsh:TA1-2040, engineering, 020201 artificial intelligence & image processing, business, lcsh:Engineering (General). Civil engineering (General), laser detection system, lcsh:Physics
وصف الملف: application/pdf
الوصول الحر: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5783208cded5a5bc69e385e29f93f314Test
https://www.mdpi.com/2076-3417/9/20/4468Test -
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المؤلفون: YoungHa Sohn, Yong-Sang Kim, KwangHyun Choi, Jae-Hong Jeon, Kee-Chan Park, GeumJu Moon
المصدر: Journal of Information Display, Vol 19, Iss 1, Pp 45-51 (2018)
مصطلحات موضوعية: GIDL, Materials science, lcsh:Computer engineering. Computer hardware, Low-temperature polycrystalline silicon, thin-film transistor, lcsh:TK7885-7895, engineering.material, charge-injection, 01 natural sciences, law.invention, P channel, law, polycrystalline silicon, 0103 physical sciences, General Materials Science, Electrical and Electronic Engineering, Charge injection, Diode, 010302 applied physics, LTPS, business.industry, Transistor, Polycrystalline silicon, Backplane, Thin-film transistor, engineering, Optoelectronics, business
الوصول الحر: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::56317543d412b601c730a4eac04ba11cTest
https://doaj.org/article/8171be5786304dcbb4f508acb53b3a64Test -
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المؤلفون: Yuan Liu, Ya-Yi Chen, Chao-Yang Han, Li Wang, Rongsheng Chen, Shu-Ting Cai, Xiao-Ming Xiong
المصدر: IEEE Journal of the Electron Devices Society, Vol 7, Pp 203-209 (2019)
مصطلحات موضوعية: Noise power, Materials science, Infrasound, Field effect, 02 engineering and technology, engineering.material, low frequency noise, 01 natural sciences, Noise (electronics), 0103 physical sciences, Electrical and Electronic Engineering, 010302 applied physics, Noise measurement, Condensed matter physics, channel length, Spectral density, 021001 nanoscience & nanotechnology, Electronic, Optical and Magnetic Materials, Threshold voltage, TK1-9971, Polycrystalline silicon, thin film transistor, engineering, Electrical engineering. Electronics. Nuclear engineering, 0210 nano-technology, Biotechnology
الوصول الحر: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::132943c348fc14e66bf2fcda9ec1c54bTest
https://ieeexplore.ieee.org/document/8600311Test/ -
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المؤلفون: Sebastien Kerdiles, F. Lefloch, Christophe Marcenat, P. Acosta Alba, Richard Daubriac, S. Lequien, T. D. Vethaak, Fabrice Nemouchi
المساهمون: Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Laboratoire de Transport Electronique Quantique et Supraconductivité (LaTEQS), PHotonique, ELectronique et Ingénierie QuantiqueS (PHELIQS), Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA)-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA)
المصدر: ECS Journal of Solid State Science and Technology
ECS Journal of Solid State Science and Technology, IOP Science, 2021, 10 (1), pp.014004. ⟨10.1149/2162-8777/abdc41⟩
ECS Journal of Solid State Science and Technology, 2021, 10 (1), pp.014004. ⟨10.1149/2162-8777/abdc41⟩مصطلحات موضوعية: Materials science, Annealing (metallurgy), chemistry.chemical_element, 02 engineering and technology, engineering.material, 01 natural sciences, Condensed Matter::Materials Science, Condensed Matter::Superconductivity, 0103 physical sciences, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 010306 general physics, Boron, ComputingMilieux_MISCELLANEOUS, [PHYS.COND.CM-MSQHE]Physics [physics]/Condensed Matter [cond-mat]/Mesoscopic Systems and Quantum Hall Effect [cond-mat.mes-hall], Superconductivity, business.industry, 021001 nanoscience & nanotechnology, Electronic, Optical and Magnetic Materials, [PHYS.COND.CM-S]Physics [physics]/Condensed Matter [cond-mat]/Superconductivity [cond-mat.supr-con], Polycrystalline silicon, chemistry, engineering, Optoelectronics, Nanosecond laser, 0210 nano-technology, business, Layer (electronics)
الوصول الحر: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8772bd91ecd7768013264d79d7ea2d9fTest
https://hal.archives-ouvertes.fr/hal-03121810Test -
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المؤلفون: Florent Lallemand, Niemat Moultif, Hugues Murray, Catherine Bunel, Daniel Chateigner, Rosine Coq Germanicus, Wadia Jouha, Arnaud Fouchet, Olivier Latry, Ulrike Lüders
المساهمون: Laboratoire de cristallographie et sciences des matériaux (CRISMAT), Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche sur les Matériaux Avancés (IRMA), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Murata Integrated Passive Solutions SAS, Groupe de physique des matériaux (GPM), Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche sur les Matériaux Avancés (IRMA), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Université de Caen Normandie (UNICAEN), Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS), École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Normandie Université (NU)-Centre National de la Recherche Scientifique (CNRS)-Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Institut de Chimie du CNRS (INC), Murata Manufacturing (JAPAN), Centre National de la Recherche Scientifique (CNRS)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)
المصدر: Nano Express
Nano Express, 2021, 2 (1), pp.010037. ⟨10.1088/2632-959x/abed3e⟩مصطلحات موضوعية: In situ, Materials science, Spreading resistance profiling, 02 engineering and technology, Scanning capacitance microscopy, Dopant activation, engineering.material, 01 natural sciences, Passivating contact, 0103 physical sciences, Microscopy, SSRM, ComputingMilieux_MISCELLANEOUS, 010302 applied physics, [PHYS]Physics [physics], Dopant, business.industry, Doping, 021001 nanoscience & nanotechnology, SCM, Polycrystalline silicon, Polysilicon, engineering, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Optoelectronics, AFM, 0210 nano-technology, business
الوصول الحر: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f3f2404c51cf9f15ba564e2d8404cc01Test
https://hal.science/hal-03341563/file/2021_Nano_Express_2_Coq_Germanicus_010037.pdfTest -
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المؤلفون: Laurent Pichon, Peng Zhang, Emmanuel Jacques, Régis Rogel, Olivier Bonnaud
المساهمون: Nanjing University of Posts and Telecommunications [Nanjing] (NJUPT), Institut d'Électronique et des Technologies du numéRique (IETR), Nantes Université (NU)-Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS), NY219099Natural Science Foundation of Jiangsu Province: BK20180762, Université de Nantes (UN)-Université de Rennes 1 (UR1), Université de Nantes (UN)-Université de Rennes (UR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS)
المصدر: Solid-State Electronics
Solid-State Electronics, Elsevier, 2021, 178, pp.107981. ⟨10.1016/j.sse.2021.107981⟩
Solid-State Electronics, 2021, 178, pp.107981. ⟨10.1016/j.sse.2021.107981⟩مصطلحات موضوعية: Materials science, Vertical thin film transistor, Field effect, 02 engineering and technology, engineering.material, 01 natural sciences, [SPI]Engineering Sciences [physics], 0103 physical sciences, Materials Chemistry, Electrical and Electronic Engineering, Grain boundary barrier, 010302 applied physics, business.industry, Velocity saturation, Pseudo-subthreshold region, Density of states, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Subthreshold slope, Electronic, Optical and Magnetic Materials, Threshold voltage, Polycrystalline silicon, Thin-film transistor, Parasitic element, engineering, Optoelectronics, Grain boundary, 0210 nano-technology, business
الوصول الحر: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5f7670c26cebd91af6e697ae225034dfTest
https://hal.archives-ouvertes.fr/hal-03195846Test -
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المؤلفون: Heidi Goenaga-Infante, Alexander M. Potapov, Tongxiang Ren, Alexander G. Sharin, Dmitri G. Aref'Ev, Polina A. Otopkova, Rüdiger Kessel, Sarah Hill, Vladimir Marchin, Zoltán Mester, Olaf Rienitz, Philip J. H. Dunn, Jun Wang, Lu Yang, Axel Pramann, Tomohiro Narukawa, Kyoung-Seok Lee, Yong-Hyeon Yim, Robert D. Vocke, Savelas A. Rabb, Juris Meija, Dmitriy Malinovskiy, Jochen Vogl, Andrei D. Bulanov
مصطلحات موضوعية: Materials science, Silicon, IAWG, Analytical chemistry, chemistry.chemical_element, Context (language use), engineering.material, CCQM-P160, 01 natural sciences, 010309 optics, symbols.namesake, 0103 physical sciences, Avogadro constant, International System of Units, 010306 general physics, revision of the SI, Molar mass, Kilogram, molar mass, General Engineering, silicon, Metrology, Polycrystalline silicon, chemistry, IRWG, symbols, engineering
الوصول الحر: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::55dae0fecd5e96ae930658ea7a08bae8Test
https://doi.org/10.1088/1681-7575/abbdbfTest -
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المؤلفون: Mireille Mouis, Céline Ternon, Thibauld Cazimajou, T. Arjmand, Thi Thu Thuy Nguyen, Bassem Salem, Maxime Legallais
المساهمون: Laboratoire des matériaux et du génie physique (LMGP ), Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)-Université Grenoble Alpes (UGA), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA), Laboratoire des technologies de la microélectronique (LTM ), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), ANR-16-PILO-0003,Convergence,Frictionless Energy Efficient Convergent Wearables For Healthcare and Lifestyle Applications(2016), European Project: 688329,H2020,H2020-ICT-2015,Nanonets2Sense(2016)
المصدر: Journal of Applied Physics
Journal of Applied Physics, 2020, 128 (20), pp.204501. ⟨10.1063/5.0023322⟩
Journal of Applied Physics, American Institute of Physics, 2020, 128 (20), pp.204501. ⟨10.1063/5.0023322⟩مصطلحات موضوعية: Materials science, Silicon, Nanowire, General Physics and Astronomy, Field effect, chemistry.chemical_element, 02 engineering and technology, engineering.material, 01 natural sciences, law.invention, law, 0103 physical sciences, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 010302 applied physics, business.industry, Transistor, 021001 nanoscience & nanotechnology, Subthreshold slope, Semiconductor, Polycrystalline silicon, chemistry, Percolation, engineering, Optoelectronics, 0210 nano-technology, business
الوصول الحر: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0b7b6434883955b38ac5f0b9eb83c308Test
https://hal.science/hal-03024377Test -
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المؤلفون: Jongbin Kim, Seung-Woo Lee, Woo-Rim Lee, Hoon-Ju Chung
المصدر: Electronics, Vol 9, Iss 1958, p 1958 (2020)
Electronics
Volume 9
Issue 11مصطلحات موضوعية: memory-in-pixel (MIP), Materials science, Silicon, Computer Networks and Communications, ComputingMethodologies_IMAGEPROCESSINGANDCOMPUTERVISION, chemistry.chemical_element, lcsh:TK7800-8360, 02 engineering and technology, Hardware_PERFORMANCEANDRELIABILITY, thin-film transistors, Backlight, engineering.material, 01 natural sciences, law.invention, law, low-temperature poly-silicon and oxide (LTPO), 0103 physical sciences, Hardware_INTEGRATEDCIRCUITS, Electrical and Electronic Engineering, 010302 applied physics, Liquid-crystal display, Pixel, business.industry, Transistor, lcsh:Electronics, 021001 nanoscience & nanotechnology, Polycrystalline silicon, Backplane, chemistry, Hardware and Architecture, Control and Systems Engineering, Thin-film transistor, Signal Processing, engineering, Optoelectronics, 0210 nano-technology, business, low-power display
وصف الملف: application/pdf
الوصول الحر: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::58335008ed2645476de845481b69f367Test
https://www.mdpi.com/2079-9292/9/11/1958Test
