يعرض 1 - 10 نتائج من 124 نتيجة بحث عن '"Polycrystalline silicon"', وقت الاستعلام: 0.82s تنقيح النتائج
  1. 1
    Pixel Circuit With Leakage Prevention Scheme for Low-Frame-Rate AMOLED Displays

    المؤلفون: Mao Hsun Cheng, Li Wei Shih, Jui-Hung Chang, Po Cheng Lai, Chih-Lung Lin, Sung Chun Chen

    المصدر: IEEE Journal of the Electron Devices Society, Vol 8, Pp 235-240 (2020)

    مصطلحات موضوعية: Materials science, low-temperature polycrystalline silicon thin-film transistors (LTPS TFTs), 02 engineering and technology, engineering.material, 010402 general chemistry, 01 natural sciences, law.invention, leakage current prevention, law, OLED, Active-matrix organic light-emitting diode~(AMOLED), Electrical and Electronic Engineering, Leakage (electronics), business.industry, Transistor, 021001 nanoscience & nanotechnology, 0104 chemical sciences, Electronic, Optical and Magnetic Materials, Threshold voltage, AMOLED, Polycrystalline silicon, Thin-film transistor, engineering, Optoelectronics, lcsh:Electrical engineering. Electronics. Nuclear engineering, 0210 nano-technology, business, lcsh:TK1-9971, Biotechnology, Voltage

    الوصول الحر: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::14d7147b5d17d3441888d54f07106302Test
    https://ieeexplore.ieee.org/document/9001057Test/


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  2. 2
    Synthesis of Si and CdTe quantum dots and their combined use as down-shifting photoluminescent centers in Si solar cells

    المؤلفون: F. A. Orona, Emmanuel Saucedo-Flores, A. Cordova-Rubio, J. E. Pelayo-Ceja, R. Ruelas, R. Lopez-Delgado, R. Guerrero-Gonzalez, Arturo A. Ayon, Mario Enrique Álvarez-Ramos

    المصدر: Materials for Renewable and Sustainable Energy, Vol 8, Iss 3, Pp 1-8 (2019)

    مصطلحات موضوعية: Photoluminescence, Materials science, Silicon, Down-shifting, lcsh:TJ807-830, lcsh:Renewable energy sources, chemistry.chemical_element, 02 engineering and technology, engineering.material, 010402 general chemistry, 01 natural sciences, law.invention, law, Solar cell, Materials Chemistry, Silicon solar cells, Cadmium telluride, lcsh:TJ163.26-163.5, Renewable Energy, Sustainability and the Environment, business.industry, Quantum dots, Photovoltaic system, 021001 nanoscience & nanotechnology, Cadmium telluride photovoltaics, 0104 chemical sciences, Electronic, Optical and Magnetic Materials, Fuel Technology, Polycrystalline silicon, chemistry, lcsh:Energy conservation, Quantum dot, engineering, Optoelectronics, Solar simulator, 0210 nano-technology, business

    الوصول الحر: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::48f5f0e2e6ba542bae283bb9834744bbTest
    http://link.springer.com/article/10.1007/s40243-019-0153-0Test


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  3. 3
    Characterization and electrical modeling of polycrystalline silicon vertical thin film transistors

    المؤلفون: Laurent Pichon, Emmanuel Jacques, Olivier Bonnaud, Peng Zhang, Régis Rogel

    المساهمون: Nanjing University of Posts and Telecommunications, Institut d'Électronique et des Technologies du numéRique (IETR), Nantes Université (NU)-Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS), Natural Science Foundation of Jiangsu Province BK20180762, Université de Nantes (UN)-Université de Rennes (UR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS), Université de Nantes (UN)-Université de Rennes 1 (UR1)

    المصدر: Solid-State Electronics
    Solid-State Electronics, Elsevier, 2020, 171, pp.107798. ⟨10.1016/j.sse.2020.107798⟩
    Solid-State Electronics, 2020, 171, pp.107798. ⟨10.1016/j.sse.2020.107798⟩

    مصطلحات موضوعية: Materials science, Low-temperature polycrystalline silicon, 02 engineering and technology, engineering.material, 01 natural sciences, Etching (microfabrication), 0103 physical sciences, Materials Chemistry, Electrical and Electronic Engineering, 010302 applied physics, Plasma etching, business.industry, Low temperature polycrystalline silicon, Density of states, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Subthreshold slope, Electronic, Optical and Magnetic Materials, Vertical thin film transistors, [SPI.TRON]Engineering Sciences [physics]/Electronics, Polycrystalline silicon, Thin-film transistor, Conduction modeling, engineering, Optoelectronics, 0210 nano-technology, business, Current density

    الوصول الحر: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::112812de4d28091446b14a21b9cbeb1dTest
    https://hal.archives-ouvertes.fr/hal-02891811Test


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  4. 4
    Design and Research of a Color Discrimination Method for Polycrystalline Silicon Cells Based on Laser Detection System

    المؤلفون: Zijian Chen, Zenghong Ma, Lian Zhang, Shiyu Wang

    المصدر: Applied Sciences, Vol 9, Iss 20, p 4468 (2019)
    Applied Sciences
    Volume 9
    Issue 20

    مصطلحات موضوعية: Materials science, Aperture, color discrimination, 02 engineering and technology, engineering.material, 01 natural sciences, lcsh:Technology, Collimated light, law.invention, 010309 optics, lcsh:Chemistry, Optics, law, 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, General Materials Science, Instrumentation, lcsh:QH301-705.5, Fluid Flow and Transfer Processes, business.industry, lcsh:T, Process Chemistry and Technology, General Engineering, polycrystalline silicon cell, Laser, lcsh:QC1-999, Computer Science Applications, Lens (optics), Wavelength, Light intensity, Optical power meter, Polycrystalline silicon, lcsh:Biology (General), lcsh:QD1-999, lcsh:TA1-2040, engineering, 020201 artificial intelligence & image processing, business, lcsh:Engineering (General). Civil engineering (General), laser detection system, lcsh:Physics

    وصف الملف: application/pdf

    الوصول الحر: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5783208cded5a5bc69e385e29f93f314Test
    https://www.mdpi.com/2076-3417/9/20/4468Test


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  5. 5
    Modelling localized charge-injection region of the p-channel low-temperature polycrystalline silicon thin-film transistor

    المؤلفون: YoungHa Sohn, Yong-Sang Kim, KwangHyun Choi, Jae-Hong Jeon, Kee-Chan Park, GeumJu Moon

    المصدر: Journal of Information Display, Vol 19, Iss 1, Pp 45-51 (2018)

    مصطلحات موضوعية: GIDL, Materials science, lcsh:Computer engineering. Computer hardware, Low-temperature polycrystalline silicon, thin-film transistor, lcsh:TK7885-7895, engineering.material, charge-injection, 01 natural sciences, law.invention, P channel, law, polycrystalline silicon, 0103 physical sciences, General Materials Science, Electrical and Electronic Engineering, Charge injection, Diode, 010302 applied physics, LTPS, business.industry, Transistor, Polycrystalline silicon, Backplane, Thin-film transistor, engineering, Optoelectronics, business

    الوصول الحر: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::56317543d412b601c730a4eac04ba11cTest
    https://doaj.org/article/8171be5786304dcbb4f508acb53b3a64Test


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  6. 6
    Scaling Down Effect on Low Frequency Noise in Polycrystalline Silicon Thin-Film Transistors

    المؤلفون: Yuan Liu, Ya-Yi Chen, Chao-Yang Han, Li Wang, Rongsheng Chen, Shu-Ting Cai, Xiao-Ming Xiong

    المصدر: IEEE Journal of the Electron Devices Society, Vol 7, Pp 203-209 (2019)

    مصطلحات موضوعية: Noise power, Materials science, Infrasound, Field effect, 02 engineering and technology, engineering.material, low frequency noise, 01 natural sciences, Noise (electronics), 0103 physical sciences, Electrical and Electronic Engineering, 010302 applied physics, Noise measurement, Condensed matter physics, channel length, Spectral density, 021001 nanoscience & nanotechnology, Electronic, Optical and Magnetic Materials, Threshold voltage, TK1-9971, Polycrystalline silicon, thin film transistor, engineering, Electrical engineering. Electronics. Nuclear engineering, 0210 nano-technology, Biotechnology

    الوصول الحر: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::132943c348fc14e66bf2fcda9ec1c54bTest
    https://ieeexplore.ieee.org/document/8600311Test/


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  7. 7
    Superconducting Polycrystalline Silicon Layer Obtained by Boron Implantation and Nanosecond Laser Annealing

    المؤلفون: Sebastien Kerdiles, F. Lefloch, Christophe Marcenat, P. Acosta Alba, Richard Daubriac, S. Lequien, T. D. Vethaak, Fabrice Nemouchi

    المساهمون: Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Laboratoire de Transport Electronique Quantique et Supraconductivité (LaTEQS), PHotonique, ELectronique et Ingénierie QuantiqueS (PHELIQS), Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA)-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA)

    المصدر: ECS Journal of Solid State Science and Technology
    ECS Journal of Solid State Science and Technology, IOP Science, 2021, 10 (1), pp.014004. ⟨10.1149/2162-8777/abdc41⟩
    ECS Journal of Solid State Science and Technology, 2021, 10 (1), pp.014004. ⟨10.1149/2162-8777/abdc41⟩

    مصطلحات موضوعية: Materials science, Annealing (metallurgy), chemistry.chemical_element, 02 engineering and technology, engineering.material, 01 natural sciences, Condensed Matter::Materials Science, Condensed Matter::Superconductivity, 0103 physical sciences, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 010306 general physics, Boron, ComputingMilieux_MISCELLANEOUS, [PHYS.COND.CM-MSQHE]Physics [physics]/Condensed Matter [cond-mat]/Mesoscopic Systems and Quantum Hall Effect [cond-mat.mes-hall], Superconductivity, business.industry, 021001 nanoscience & nanotechnology, Electronic, Optical and Magnetic Materials, [PHYS.COND.CM-S]Physics [physics]/Condensed Matter [cond-mat]/Superconductivity [cond-mat.supr-con], Polycrystalline silicon, chemistry, engineering, Optoelectronics, Nanosecond laser, 0210 nano-technology, business, Layer (electronics)

    الوصول الحر: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8772bd91ecd7768013264d79d7ea2d9fTest
    https://hal.archives-ouvertes.fr/hal-03121810Test


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  8. 8
    Dopant activity for highly in-situ doped polycrystalline silicon: hall, XRD, scanning capacitance microscopy (SCM) and scanning spreading resistance microscopy (SSRM)

    المؤلفون: Florent Lallemand, Niemat Moultif, Hugues Murray, Catherine Bunel, Daniel Chateigner, Rosine Coq Germanicus, Wadia Jouha, Arnaud Fouchet, Olivier Latry, Ulrike Lüders

    المساهمون: Laboratoire de cristallographie et sciences des matériaux (CRISMAT), Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche sur les Matériaux Avancés (IRMA), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Murata Integrated Passive Solutions SAS, Groupe de physique des matériaux (GPM), Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche sur les Matériaux Avancés (IRMA), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Université de Caen Normandie (UNICAEN), Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS), École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Normandie Université (NU)-Centre National de la Recherche Scientifique (CNRS)-Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Institut de Chimie du CNRS (INC), Murata Manufacturing (JAPAN), Centre National de la Recherche Scientifique (CNRS)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)

    المصدر: Nano Express
    Nano Express, 2021, 2 (1), pp.010037. ⟨10.1088/2632-959x/abed3e⟩

    مصطلحات موضوعية: In situ, Materials science, Spreading resistance profiling, 02 engineering and technology, Scanning capacitance microscopy, Dopant activation, engineering.material, 01 natural sciences, Passivating contact, 0103 physical sciences, Microscopy, SSRM, ComputingMilieux_MISCELLANEOUS, 010302 applied physics, [PHYS]Physics [physics], Dopant, business.industry, Doping, 021001 nanoscience & nanotechnology, SCM, Polycrystalline silicon, Polysilicon, engineering, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Optoelectronics, AFM, 0210 nano-technology, business

    الوصول الحر: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f3f2404c51cf9f15ba564e2d8404cc01Test
    https://hal.science/hal-03341563/file/2021_Nano_Express_2_Coq_Germanicus_010037.pdfTest


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  9. 9
    Multiscale Discrete Element Modeling

    المؤلفون: Dmitry L. Reviznikov, Andrew A. Zhuravlev, Karine Abgaryan

    المصدر: Symmetry, Vol 13, Iss 219, p 219 (2021)
    Symmetry
    Volume 13
    Issue 2

    مصطلحات موضوعية: Materials science, Physics and Astronomy (miscellaneous), Silicon, General Mathematics, Reference data (financial markets), chemistry.chemical_element, 02 engineering and technology, engineering.material, 01 natural sciences, atomic sample, Molecular dynamics, Computer Science (miscellaneous), Statistical physics, 0101 mathematics, discrete element method, lcsh:Mathematics, Distinctive feature, 021001 nanoscience & nanotechnology, lcsh:QA1-939, Multiscale modeling, multiscale modeling, Discrete element method, molecular dynamics, ODE system, 010101 applied mathematics, Polycrystalline silicon, chemistry, Chemistry (miscellaneous), Ordinary differential equation, engineering, 0210 nano-technology

    وصف الملف: application/pdf

    الوصول الحر: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::60d73e557335fc0a59938cfc35683ae9Test
    https://www.mdpi.com/2073-8994/13/2/219Test


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  10. 10
    In-depth analysis of electrical characteristics for polycrystalline silicon vertical thin film transistors

    المؤلفون: Laurent Pichon, Peng Zhang, Emmanuel Jacques, Régis Rogel, Olivier Bonnaud

    المساهمون: Nanjing University of Posts and Telecommunications [Nanjing] (NJUPT), Institut d'Électronique et des Technologies du numéRique (IETR), Nantes Université (NU)-Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS), NY219099Natural Science Foundation of Jiangsu Province: BK20180762, Université de Nantes (UN)-Université de Rennes 1 (UR1), Université de Nantes (UN)-Université de Rennes (UR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS)

    المصدر: Solid-State Electronics
    Solid-State Electronics, Elsevier, 2021, 178, pp.107981. ⟨10.1016/j.sse.2021.107981⟩
    Solid-State Electronics, 2021, 178, pp.107981. ⟨10.1016/j.sse.2021.107981⟩

    مصطلحات موضوعية: Materials science, Vertical thin film transistor, Field effect, 02 engineering and technology, engineering.material, 01 natural sciences, [SPI]Engineering Sciences [physics], 0103 physical sciences, Materials Chemistry, Electrical and Electronic Engineering, Grain boundary barrier, 010302 applied physics, business.industry, Velocity saturation, Pseudo-subthreshold region, Density of states, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Subthreshold slope, Electronic, Optical and Magnetic Materials, Threshold voltage, Polycrystalline silicon, Thin-film transistor, Parasitic element, engineering, Optoelectronics, Grain boundary, 0210 nano-technology, business

    الوصول الحر: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5f7670c26cebd91af6e697ae225034dfTest
    https://hal.archives-ouvertes.fr/hal-03195846Test


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