التفاصيل البيبلوغرافية
| العنوان: |
Pulsed reactive chemical vapor deposition in the C-Ti-Si system from H2/TiCl4/SiCl4 |
| المؤلفون: |
Jacques, S. sylvain.jacques@adm.univ-lyon1.fr, Di-Murro, H.1, Berthet, M.-P.1, Vincent, H.1 |
| المصدر: |
Thin Solid Films. May2005, Vol. 478 Issue 1/2, p13-20. 8p. |
| مصطلحات موضوعية: |
*CHEMICAL vapor deposition, *VAPOR-plating, *METAL organic chemical vapor deposition, *PLASMA-enhanced chemical vapor deposition |
| مستخلص: |
Abstract: A new route was explored to produce Ti3SiC2-based thin coatings on carbonaceous substrates. This method combines low pressure-pulsed chemical vapor deposition (CVD) and reactive CVD, the gaseous phase being a mixture of SiCl4, TiCl4 and H2. It consists in depositing a pyrocarbon film on the substrate, converting C into SiC (or TiC x ) and then converting this carbide into Ti3SiC2. Experiments and thermodynamic calculations were performed and compared. The films were investigated by X-ray diffraction and transmission electron microscopy. Several microstructures consisting of various combinations of Ti3SiC2, C, SiC, TiC x and TiSi2 were obtained. [Copyright &y& Elsevier] |
| قاعدة البيانات: |
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