التفاصيل البيبلوغرافية
| العنوان: |
15.4% CuIn1−xGaxSe2-based photovoltaic cells from solution-based precursor films |
| المؤلفون: |
Bhattacharya, R.N., Hiltner, J.F., Batchelor, W., Contreras, M.A., Noufi, R.N., Sites, J.R. |
| المصدر: |
Thin Solid Films; February 2000, Vol. 361 Issue: 1 p396-399, 4p |
| مستخلص: |
We have fabricated 15.4%- and 12.4%-efficient CuIn1−xGaxSe2(CIGS)-based photovoltaic devices from solution-based electrodeposition (ED) and electroless-deposition (EL) precursors. As-deposited precursors are Cu-rich CIGS. Additional In, Ga, and Se are added to the ED and EL precursor films by physical vapor deposition (PVD) to adjust the final film composition to CuIn1−xGaxSe2. The ED and EL device parameters are compared with those of a recent world record, an 18.8%-efficient PVD device. The tools used for comparison are current voltage, capacitance voltage, and spectral response characteristics. |
| قاعدة البيانات: |
Supplemental Index |
