Dependence of magnetic domain patterns on plasma-induced differential oxidation of CoPd thin films
| العنوان: | Dependence of magnetic domain patterns on plasma-induced differential oxidation of CoPd thin films |
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| المؤلفون: | Wen Chin Lin, Der-Hsin Wei, Tzu-Hung Chuang, Wei-Hsiang Wang, Pei-hsun Jiang, Chak-Ming Liu |
| المصدر: | Surfaces and Interfaces. 27:101582 |
| بيانات النشر: | Elsevier BV, 2021. |
| سنة النشر: | 2021 |
| مصطلحات موضوعية: | Condensed Matter - Materials Science, Kerr effect, Materials science, Condensed Matter - Mesoscale and Nanoscale Physics, Magnetic domain, Condensed matter physics, Absorption spectroscopy, Oxide, Materials Science (cond-mat.mtrl-sci), FOS: Physical sciences, General Physics and Astronomy, Surfaces and Interfaces, General Chemistry, Plasma, Coercivity, equipment and supplies, Condensed Matter Physics, Surfaces, Coatings and Films, Magnetic anisotropy, chemistry.chemical_compound, chemistry, Mesoscale and Nanoscale Physics (cond-mat.mes-hall), Thin film, human activities |
| الوصف: | We demonstrate the evolution of the micro-patterned magnetic domains in CoPd thin films pretreated with e-beam lithography and O2 plasma. During the days-long oxidation, significantly different behaviors of the patterned magnetic domains under magnetization reversal are observed via magneto-optic Kerr effect microscopy on different days. The evolution of the magnetic behaviors indicate critical changes in the local magnetic anisotropy energies due to the Co oxides that evolve into different oxide forms, which are characterized by micro-area X-ray absorption spectroscopy and X-ray photoelectron spectroscopy. The coercive field of the area pre-exposed to plasma can decrease to a value 10 Oe smaller than that unexposed to plasma, whereas after a longer duration of oxidation the coercive field can instead become larger in the area pre-exposed to plasma than that unexposed, leading to an opposite magnetic pattern. Various forms of oxidation can therefore provide an additional dimension for magnetic-domain engineering to the current conventional lithographies. Comment: Supplementary materials available at https://www.sciencedirect.com/science/article/pii/S2468023021006544#ec-research-dataTest |
| تدمد: | 2468-0230 |
| الوصول الحر: | https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9a3205ac8f061b9b29a9da8678948d98Test https://doi.org/10.1016/j.surfin.2021.101582Test |
| حقوق: | OPEN |
| رقم الانضمام: | edsair.doi.dedup.....9a3205ac8f061b9b29a9da8678948d98 |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 24680230 |
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