التفاصيل البيبلوغرافية
| العنوان: |
Integrating dual workfunction metal gates in CMOS. (cover story) |
| المؤلفون: |
Song, S. C.1 s.c.song@sematech.org, Hussain, M. M.2, Barnett, J.3, Ju, B. S.4, Lee, B. H.5 |
| المصدر: |
Solid State Technology. Aug2006, Vol. 49 Issue 8, p47-50. 4p. |
| مصطلحات موضوعية: |
COMPLEMENTARY metal oxide semiconductors, FIELD-effect transistors, SURFACE tension, SURFACE chemistry, SEMICONDUCTORS, TRANSISTORS |
| مستخلص: |
The article introduces various integration schemes for fabricating dual metal gate of complimentary metal oxide semiconductors (CMOS) field-effect transistors. Dual metal gate CMOS integration requires various wet etch processes. This integration is to separate varying metal gates within the transistors on the same wafer. Finally, such technological integration schemes should be established to remove totally the first metal gate without destructing the underlying gate dielectric. |
| قاعدة البيانات: |
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