التفاصيل البيبلوغرافية
| العنوان: |
Flexible In-cell Infrared a-Si Sensor. |
| المؤلفون: |
Chiang, Wen-Jen, Kung, Chen-Peng, Chen, Sheng-Wei, Chang, Chih-Chia, Wu, Chung-Wen |
| المصدر: |
SID Symposium Digest of Technical Papers; Jun2012, Vol. 43 Issue 1, p338-341, 4p |
| مصطلحات موضوعية: |
PHOTODETECTORS, MOTHERBOARDS, INFRARED imaging, DETECTORS, WAVELENGTHS, PHOTOLUMINESCENCE |
| مستخلص: |
In this work, an in-cell photosensor was fabricated on a flexible display backplane for infrared sensing utilizations, such as optical touch panel, pen-writing input function, and so on. The IR responsivity of a hydrogenated amorphous silicon thin film transistor was characterized under near-infrared illuminations of 850 nm and 940 nm wavelengths. A compact active pixel sensor integrating the photo transistor was embedded into the display cell array. The experimental results demonstrate that a photocurrent to dark current ratio above 103, and an infrared sensitivity of 0.2 V/(s·W·m2) of the in-cell active pixel sensor were obtained. With the advantages of process compatibility, flexibility and low fabrication cost of scaling-up, the flexible in-cell infrared sensor can be a very promising optical detector for all kinds of applications. [ABSTRACT FROM AUTHOR] |
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| قاعدة البيانات: |
Complementary Index |
