التفاصيل البيبلوغرافية
| العنوان: |
Recent Enhancements to Interline and Electron Multiplying CCD Image Sensors. |
| المؤلفون: |
Stevens, Eric G., Clayhold, Jeffrey A., Doan, Hung, Fabinski, Robert P., Hynecek, Jaroslav, Kosman, Stephen L., Parks, Christopher |
| المصدر: |
Sensors (14248220); Dec2017, Vol. 17 Issue 12, p2841, 10p |
| مصطلحات موضوعية: |
PHOTODIODES, IMAGE sensors, ION implantation, PHOTOCONDUCTING devices, QUANTUM efficiency |
| مستخلص: |
This paper describes recent process modifications made to enhance the performance of interline and electron-multiplying charge-coupled-device (EMCCD) image sensors. By use of MeV ion implantation, quantum efficiency in the NIR region of the spectrum was increased by 2×, and image smear was reduced by 6 dB. By reducing the depth of the shallow photodiode (PD) implants, the photodiode-to-vertical-charge-coupled-device (VCCD) transfer gate voltage required for no-lag operation was reduced by 3 V, and the electronic shutter voltage was reduced by 9 V. The thinner, surface pinning layer also resulted in a reduction of smear by 4 dB in the blue portion of the visible spectrum. For EMCCDs, gain aging was eliminated by providing an oxide-only dielectric under its multiplication phase, while retaining the oxide-nitride-oxide (ONO) gate dielectrics elsewhere in the device. [ABSTRACT FROM AUTHOR] |
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