Effect of noise components on L-shaped and T-shaped heterojunction tunnel field effect transistors
| العنوان: | Effect of noise components on L-shaped and T-shaped heterojunction tunnel field effect transistors |
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| المؤلفون: | Sweta Chander, Sanjeet Kumar Sinha, Rekha Chaudhary, Rupam Goswami |
| المصدر: | Semiconductor Science and Technology. 37:075011 |
| بيانات النشر: | IOP Publishing, 2022. |
| سنة النشر: | 2022 |
| مصطلحات موضوعية: | Materials Chemistry, Electrical and Electronic Engineering, Condensed Matter Physics, Electronic, Optical and Magnetic Materials |
| الوصف: | This paper reports on a comparative study of the analysis of electrical noise of heterojunction tunnelling-field-effect-transistors with an L-shaped gate (LTFET) and with a T-shaped gate (TTFET) using numerical simulations. The effect of different noise components on both structures were investigated at low frequency and high frequency to check the viability of the proposed devices. The two source regions are used in TTFET to increase the tunnelling area that enhances the ON-current. Also, we studied the effect of introducing Gaussian traps onto the interface of the source-gate oxide and channel-gate oxide on different noise components and net noise. TTFET outperforms LTFET in terms of electrical parameters and noise spectral densities, thereby offering a solution to the trade-off between high tunnelling rates and noise spectral densities in TFETs. The proposed LTFET and TTFETs are free from ambipolarity issues and can further be deployed in low power applications. |
| تدمد: | 1361-6641 0268-1242 |
| الوصول الحر: | https://explore.openaire.eu/search/publication?articleId=doi_________::b6bc39f075b495cbf01da04b123d8357Test https://doi.org/10.1088/1361-6641/ac696eTest |
| حقوق: | CLOSED |
| رقم الانضمام: | edsair.doi...........b6bc39f075b495cbf01da04b123d8357 |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 13616641 02681242 |
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