التفاصيل البيبلوغرافية
| العنوان: |
Integrated AlGaN quadruple-band ultraviolet photodetectors. |
| المؤلفون: |
Gökkavas, Mutlu, Butun, Serkan, Caban, Piotr, Strupinski, Wlodek, Ozbay, Ekmel |
| المصدر: |
Semiconductor Science & Technology; Jun2012, Vol. 27 Issue 6, p1-5, 5p |
| مصطلحات موضوعية: |
OPTOELECTRONIC devices, INTEGRATED circuits, QUANTUM efficiency, ULTRAVIOLET radiation, EPITAXY, METALLIC films, HETEROSTRUCTURES |
| مستخلص: |
Monolithically integrated quadruple back-illuminated ultraviolet metal-semiconductor-metal photodetectors with four different spectral responsivity bands were demonstrated on each of two different AlxGa1-xN heterostructures. The average of the full-width at half-maximum (FWHM) of the quantum efficiency peaks was 18.15 nm for sample A, which incorporated five 1000 nm thick epitaxial layers. In comparison, the average FWHM for sample B was 9.98 nm, which incorporated nine 500 nm thick epitaxial layers. [ABSTRACT FROM AUTHOR] |
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| قاعدة البيانات: |
Complementary Index |
