Degradation of topological surface state by nonmagnetic S doping in SrxBi2Se3

التفاصيل البيبلوغرافية
العنوان: Degradation of topological surface state by nonmagnetic S doping in SrxBi2Se3
المؤلفون: Juanjuan Gu, Xueyou Hu, Min Tan, Qinglong Wang, Hui Huang, Ping Ji
المصدر: Scientific Reports.
بيانات النشر: Nature Publishing Group, 2017.
سنة النشر: 2017
مصطلحات موضوعية: Superconductivity, Surface (mathematics), Multidisciplinary, Materials science, Dopant, Doping, 02 engineering and technology, 021001 nanoscience & nanotechnology, Topology, 01 natural sciences, Development (topology), Impurity, Condensed Matter::Superconductivity, 0103 physical sciences, Volume fraction, 010306 general physics, 0210 nano-technology, Surface states
الوصف: Research on possible topological superconductivity has grown rapidly over the past several years, from fundamental studies to the development of next generation technologies. Recently, it has been reported that the SrxBi2Se3 exhibits superconductivity with topological surface state, making this compound a promising candidate for investigating possible topological superconductivity. However, whether or not the topological surface state is robust against impurities is not clear in this system. Here we report a detailed investigation on the lattice structure, electronic and magnetic properties, as well as the topological superconducting properties of SrxBi2Se3−ySy samples. It is found that the superconducting transition temperature keeps nearly unchanged in all samples, despite of a gradual decrease of the superconducting shielding volume fraction with increasing S doping content. Meanwhile, the Shubnikov-de Hass oscillation results of the SrxBi2Se3−ySy samples reveal that the topological surface states are destroyed in S doped samples, suggesting the topological character is degraded by nonmagnetic dopants.
اللغة: English
تدمد: 2045-2322
DOI: 10.1038/srep45565
الوصول الحر: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c25e46312128ca58c5c656320bcf9964Test
حقوق: OPEN
رقم الانضمام: edsair.doi.dedup.....c25e46312128ca58c5c656320bcf9964
قاعدة البيانات: OpenAIRE
الوصف
تدمد:20452322
DOI:10.1038/srep45565