دورية أكاديمية
Effects of oxidation by O-2 plasma on formation of Ni/Au ohmic contact to p-GaN
| العنوان: | Effects of oxidation by O-2 plasma on formation of Ni/Au ohmic contact to p-GaN |
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| المؤلفون: | Chen, ZZ, Qin, ZX, Tong, YZ, Hu, XD, Yu, TJ, Yang, ZJ, Yu, LS, Zhang, GY, Zheng, WL, Jia, QJ, Jiang, XM |
| المساهمون: | Chen, ZZ (reprint author), Peking Univ, State Key Lab Artificial Microstruct & Mesoscop P, Sch Phys, Beijing 100871, Peoples R China., Peking Univ, State Key Lab Artificial Microstruct & Mesoscop P, Sch Phys, Beijing 100871, Peoples R China., Chinese Acad Sci, Beijing Synchrotron Radiat Facil, Inst High Energy Phys, Beijing 100037, Peoples R China. |
| المصدر: | SCI ; EI |
| بيانات النشر: | 应用物理杂志 |
| سنة النشر: | 2004 |
| المجموعة: | Peking University Institutional Repository (PKU IR) / 北京大学机构知识库 |
| مصطلحات موضوعية: | ELECTRICAL-PROPERTIES |
| الوصف: | Oxidation of Ni/Au (5 nm/10 nm) contact to p-GaN layer was performed by O-2 plasma in a reactive ion etching system. The structural characteristics of the Ni/Au p-GaN for different oxidation time were investigated by x-ray diffraction (XRD) measurements, using an intense synchrotron x-ray source. The XRD measurements indicated that the grains of nickel oxide polycrystalline in the contact were grown continually when the oxidation time increased in 10 min. However, Au showed amorphouslike and the intensities of Bragg diffraction peaks were hardly changed when oxidation time increased to 10 min. The nickel oxide formed by O-2 plasma without sequent thermal annealing did not reduce the specific contact resistance (rho(c)) to p-GaN, but it took an important role in lowering rho(c) followed by thermal annealing in N-2 at 500degreesC for 10 min. Optical transmission spectra confirmed that the nickel was easy to be oxidized and few interdiffusions occurred at the metal interface in O-2 plasma ambient. Finally, the mechanism of oxidation on the formation of low rho(c) ohmic contact was also discussed. (C) 2004 American Institute of Physics. ; Physics, Applied ; SCI(E) ; EI ; 2 ; ARTICLE ; 4 ; 2091-2094 ; 96 |
| نوع الوثيقة: | journal/newspaper |
| اللغة: | English |
| تدمد: | 0021-8979 |
| العلاقة: | JOURNAL OF APPLIED PHYSICS.2004,96,(4),2091-2094.; 998120; http://hdl.handle.net/20.500.11897/149215Test; WOS:000223055100048 |
| DOI: | 10.1063/1.1773918 |
| الإتاحة: | https://doi.org/20.500.11897/149215Test https://doi.org/10.1063/1.1773918Test https://hdl.handle.net/20.500.11897/149215Test |
| رقم الانضمام: | edsbas.5EC129B2 |
| قاعدة البيانات: | BASE |
| تدمد: | 00218979 |
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| DOI: | 10.1063/1.1773918 |