High sensitivity measurement system for the direct-current, capacitance-voltage, and gate-drain low frequency noise characterization of field effect transistors
| العنوان: | High sensitivity measurement system for the direct-current, capacitance-voltage, and gate-drain low frequency noise characterization of field effect transistors |
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| المؤلفون: | Gino Giusi, Graziella Scandurra, Carmine Ciofi, O. Giordano, Matteo Rapisarda, Sabrina Calvi |
| المصدر: | Review of Scientific Instruments. 87:044702 |
| بيانات النشر: | AIP Publishing, 2016. |
| سنة النشر: | 2016 |
| مصطلحات موضوعية: | 010302 applied physics, Materials science, business.industry, System of measurement, Direct current, Topology (electrical circuits), Hardware_PERFORMANCEANDRELIABILITY, 02 engineering and technology, 021001 nanoscience & nanotechnology, Bias voltage, Capacitance, Drain current, Electron devices, Reconfigurable hardware, Spurious signal noise, Thin film transistors, Topology, Units of measurement, 01 natural sciences, Noise (electronics), 0103 physical sciences, Hardware_INTEGRATEDCIRCUITS, Optoelectronics, Device under test, Field-effect transistor, 0210 nano-technology, business, Instrumentation, Sensitivity (electronics), AND gate |
| الوصف: | Measurements of current fluctuations originating in electron devices have been largely used to understand the electrical properties of materials and ultimate device performances. In this work, we propose a high-sensitivity measurement setup topology suitable for the automatic and programmable Direct-Current (DC), Capacitance-Voltage (CV), and gate-drain low frequency noise characterization of field effect transistors at wafer level. Automatic and programmable operation is particularly useful when the device characteristics relax or degrade with time due to optical, bias, or temperature stress. The noise sensitivity of the proposed topology is in the order of fA/Hz(1/2), while DC performances are limited only by the source and measurement units used to bias the device under test. DC, CV, and NOISE measurements, down to 1 pA of DC gate and drain bias currents, in organic thin film transistors are reported to demonstrate system operation and performances. |
| تدمد: | 1089-7623 0034-6748 |
| الوصول الحر: | https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8838144de73b40254bb86cf7100116f0Test https://doi.org/10.1063/1.4945263Test |
| حقوق: | OPEN |
| رقم الانضمام: | edsair.doi.dedup.....8838144de73b40254bb86cf7100116f0 |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 10897623 00346748 |
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