التفاصيل البيبلوغرافية
| العنوان: |
100 m² Solar Cells on Czochralski Silicon with an Efficiency of 20·2%. |
| المؤلفون: |
Glunz, S.W., Koster, B., Leimenstoll, T., Rein, S., Schaffer, E., Knobloch, J., Abe, T. |
| المصدر: |
Progress in Photovoltaics; Mar/Apr2000, Vol. 8 Issue 2, p237, 4p, 1 Chart, 1 Graph |
| مصطلحات موضوعية: |
SOLAR cells, SILICON |
| مستخلص: |
A solar cell process optimized for oxygen-contaminated silicon was used to fabricate 10 × 10 cm² cells on gallium-doped p-type Czochralski (Cz) silicon. An independently confirmed record efficiency of 20.2% was achieved. Although the material used contains a significant concentration of interstitial oxygen, no illumination-induced degradation of the cell parameters was observed. This is in excellent agreement with the observation that the metastable defect underlying, the minority carrier lifetime is correlated with oxygen and boron. Thus, using gallium instead of boron as the dopant for p-type Cz silicon is an appropriate way to avoid the carrier lifetime degradation which is observed in boron-doped oxygen-contaminated Cz-Si. [ABSTRACT FROM AUTHOR] |
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| قاعدة البيانات: |
Complementary Index |
