دورية
Mg-doped AlGaN grown on an AlN/sapphire template by metalorganic chemical vapour deposition
| العنوان: | Mg-doped AlGaN grown on an AlN/sapphire template by metalorganic chemical vapour deposition |
|---|---|
| المؤلفون: | Yu, Hongbo, Strupinski, Wlodek, Butun, Serkan, Ozbay, Ekmel |
| المصدر: | Physica Status Solidi (A) - Applications and Materials Science; April 2006, Vol. 203 Issue: 5 p868-873, 6p |
| مستخلص: | The growth of high-performance Mg-doped p-type AlxGa1–xN (x = 0.35) layers using low-pressure metalorganic chemical vapour deposition on an AlN/sapphire template is reported. The influence of growth conditions on the p-type conductivity of the AlxGa1–xN (x = 0.35) alloy was investigated. It was found that the p-type resistivity of the AlGaN alloy demonstrates a marked dependence on the Mg concentration, V/III ratio and group III element flow rate. A minimum p-type resistivity of 3.5 Ω cm for AlxGa1–xN (x = 0.35) epilayers was achieved. A Ni/Au (10 nm/100 nm) ohmic contact was also fabricated and a specific contact resistivity of 8.1 × 10–2 Ω cm2 was measured. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) |
| قاعدة البيانات: | Supplemental Index |
| تدمد: | 18626300 18626319 |
|---|---|
| DOI: | 10.1002/pssa.200521461 |