High-dielectric-constant hafnium silicate insulator for low-voltage pentacene field-effect transistors
| العنوان: | High-dielectric-constant hafnium silicate insulator for low-voltage pentacene field-effect transistors |
|---|---|
| المؤلفون: | Hiroshi Sato, Hidenori Okuzaki, Susumu Arima, Tsubasa Kagata, Hu Yan |
| المصدر: | physica status solidi (a). 205:2970-2974 |
| بيانات النشر: | Wiley, 2008. |
| سنة النشر: | 2008 |
| مصطلحات موضوعية: | Permittivity, Electron mobility, Chemistry, Doping, Analytical chemistry, Surfaces and Interfaces, Dielectric, Sputter deposition, Condensed Matter Physics, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, Pentacene, chemistry.chemical_compound, Materials Chemistry, Field-effect transistor, Electrical and Electronic Engineering, High-κ dielectric |
| الوصف: | We prepared HfSiOx on a heavily doped n-type silicon wafer by sputtering of a HfSi (50:50 at%) target using Ar:N2:O2 as carrier gas. The HfSiOx layer thus prepared was characterized by XPS, XRD, STEM and C –F measurements, indicating that the layer mainly consisted of 100 nm thick amorphous HfSiO5 with a dielectric constant ϵr = 7.7. The leakage current density was 1 nA/cm2 at an electric field of 2 MV/cm. We first fabricated top-contact pentacene FETs using the high dielectric constant hafnium silicate as an insulator, coupled with a polymer microfiber-based channel patterning technique. The pentacene FET showed well-saturated output characteristics at low driving voltages, i.e. VD = –10 V and VG = –10 V, and hole mobility of 0.02 cm2/V s and on/off current ratio of 2600. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) |
| تدمد: | 1862-6319 1862-6300 |
| الوصول الحر: | https://explore.openaire.eu/search/publication?articleId=doi_________::00baf4805e2559b671640679efc40fc0Test https://doi.org/10.1002/pssa.200824297Test |
| حقوق: | CLOSED |
| رقم الانضمام: | edsair.doi...........00baf4805e2559b671640679efc40fc0 |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 18626319 18626300 |
|---|