التفاصيل البيبلوغرافية
| العنوان: |
Numerical simulation study for efficiency enhancement of doubly graded perovskite solar cell. |
| المؤلفون: |
Bhattarai, Sagar1 (AUTHOR), Sharma, Arvind1 (AUTHOR), Muchahary, Deboraj2 (AUTHOR), Gogoi, Dipankar1 (AUTHOR), Das, T.D.1 (AUTHOR) tddas@hotmail.com |
| المصدر: |
Optical Materials. Aug2021, Vol. 118, pN.PAG-N.PAG. 1p. |
| مصطلحات موضوعية: |
*SOLAR cells, *QUANTUM efficiency, *OPEN-circuit voltage, *COMPUTER simulation, *SHORT circuits, *PEROVSKITE, *THEMATIC mapper satellite |
| مستخلص: |
In this paper, optimization of perovskite solar cell (PSC) with a computational simulation approach of double graded active layers for attaining an excellent power conversion efficiency (PCE) has been studied. The device is designed before the fluency in charge carriers with the implication of the double carrier transport materials (ETMs and HTMs) in the simulated PSC architecture. The present study further facilitates that the perovskite active materials with optimized thickness are stacked having a bandgap of 1.6 eV for achieving an improved short circuit current density (J SC) of about 20.29 mA/cm2, exhibiting a high open-circuit voltage (V OC) of 1.1 V, fill factor (FF) about an average of 90% and an excellent power conversion efficiency (PCE) of 19.20%, respectively. Furthermore, the highest external quantum efficiency (EQE), averaging 82%, is also observed for the PSC, precisely in the wavelength span of 380 nm–800 nm. Hence, the static combination of the double carrier transport materials having double graded active layers effectively enhances the optoelectronic parameters and provides a significant pathway for further device optimization in the future. • A comprehensive study of double graded MAPbI 3 based PSCs was carried out using SETFOS- Fluxim 5.0.6. • Double CTM combination of ZnO/TiO 2 and Spiro-OMeTAD/CIS attains the best possible device output. • The distinct bandgap combination in the PSC at optimal thickness offers excellent efficiency of 19.20%. • The present work can be significant for the device optimization of PSC. [ABSTRACT FROM AUTHOR] |
| قاعدة البيانات: |
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