التفاصيل البيبلوغرافية
| العنوان: |
Electrical profiles of 20nm junctions in Sb implanted silicon |
| المؤلفون: |
Alzanki, T.1, Gwilliam, R.1, Emerson, N.1, Smith, A.1, Webb, R.1, Sealy, B.J. b.sealy@surrey.ac.uk |
| المصدر: |
Nuclear Instruments & Methods in Physics Research Section B. Jan2006, Vol. 242 Issue 1/2, p693-695. 3p. |
| مصطلحات موضوعية: |
*ELECTRIC currents, *HALL effect, *PARTICLES (Nuclear physics), *SPECTRUM analysis |
| مستخلص: |
Abstract: Differential Hall effect and resistivity measurements have been carried out to obtain electron concentration and mobility profiles of both single implants (2keV Sb+, 1×1015 cm−2) and double implants (2keV Sb+, 1×1015 +30keV Sb+, 2×1013 cm−2) in (100) silicon with nanometer resolution. A comparison is made between carrier and atomic profiles determined using secondary ion mass spectroscopy. Although low resistivities are obtained after annealing at 600°C, the mobility is improved and the resistivity further lowered by raising the temperature to 800°C. [Copyright &y& Elsevier] |
| قاعدة البيانات: |
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