التفاصيل البيبلوغرافية
| العنوان: |
Multi-quantum-well nanowire heterostructures for wavelength-controlled lasers. |
| المؤلفون: |
Qian, Fang, Li, Yat, Gradečak, Silvija, Park, Hong-Gyu, Dong, Yajie, Ding, Yong, Wang, Zhong Lin, Lieber, Charles M. |
| المصدر: |
Nature Materials; Sep2008, Vol. 7 Issue 9, p701-706, 6p, 2 Black and White Photographs, 1 Diagram, 2 Graphs |
| مصطلحات موضوعية: |
NANOWIRES, TRANSISTORS, ELECTRON microscopy, EMISSIONS (Air pollution), TEMPERATURE |
| مستخلص: |
Rational design and synthesis of nanowires with increasingly complex structures can yield enhanced and/or novel electronic and photonic functions. For example, Ge/Si core/shell nanowires have exhibited substantially higher performance as field-effect transistors and low-temperature quantum devices compared with homogeneous materials, and nano-roughened Si nanowires were recently shown to have an unusually high thermoelectric figure of merit. Here, we report the first multi-quantum-well (MQW) core/shell nanowire heterostructures based on well-defined III-nitride materials that enable lasing over a broad range of wavelengths at room temperature. Transmission electron microscopy studies show that the triangular GaN nanowire cores enable epitaxial and dislocation-free growth of highly uniform (InGaN/GaN)n quantum wells with n=3, 13 and 26 and InGaN well thicknesses of 1–3 nm. Optical excitation of individual MQW nanowire structures yielded lasing with InGaN quantum-well composition-dependent emission from 365 to 494 nm, and threshold dependent on quantum well number, n. Our work demonstrates a new level of complexity in nanowire structures, which potentially can yield free-standing injection nanolasers. [ABSTRACT FROM AUTHOR] |
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| قاعدة البيانات: |
Complementary Index |
