Advanced Atomic Layer Deposition Technologies for Micro-LEDs and VCSELs
| العنوان: | Advanced Atomic Layer Deposition Technologies for Micro-LEDs and VCSELs |
|---|---|
| المؤلفون: | Po-Tsung Lee, Tingzhu Wu, Guisen Li, Shouqiang Lai, Shui-Yang Lien, Su-Hui Lin, Yen-Wei Yeh, Hao-Chung Kuo, Tsung-Chi Hsu, Zhong Chen, Dong-Sing Wuu |
| المصدر: | Nanoscale Research Letters, Vol 16, Iss 1, Pp 1-14 (2021) Nanoscale Research Letters |
| بيانات النشر: | SpringerOpen, 2021. |
| سنة النشر: | 2021 |
| مصطلحات موضوعية: | Materials science, Passivation, business.industry, Nano Review, Chemical vapor deposition, Semiconductor device, Condensed Matter Physics, Reliability, VCSEL, law.invention, Atomic layer deposition, Etching (microfabrication), law, ALD, TA401-492, Optoelectronics, General Materials Science, business, Materials of engineering and construction. Mechanics of materials, Micro-LED, Leakage (electronics), Diode, Light-emitting diode |
| الوصف: | In recent years, the process requirements of nano-devices have led to the gradual reduction in the scale of semiconductor devices, and the consequent non-negligible sidewall defects caused by etching. Since plasma-enhanced chemical vapor deposition can no longer provide sufficient step coverage, the characteristics of atomic layer deposition ALD technology are used to solve this problem. ALD utilizes self-limiting interactions between the precursor gas and the substrate surface. When the reactive gas forms a single layer of chemical adsorbed on the substrate surface, no reaction occurs between them and the growth thickness can be controlled. At the Å level, it can provide good step coverage. In this study, recent research on the ALD passivation on micro-light-emitting diodes and vertical cavity surface emitting lasers was reviewed and compared. Several passivation methods were demonstrated to lead to enhanced light efficiency, reduced leakage, and improved reliability. |
| اللغة: | English |
| الوصول الحر: | https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1b6dba67f673c3d4a4d404ef6108fc76Test https://doaj.org/article/66fda989a7bd4adcb7b64c7c58c6cab2Test |
| حقوق: | OPEN |
| رقم الانضمام: | edsair.doi.dedup.....1b6dba67f673c3d4a4d404ef6108fc76 |
| قاعدة البيانات: | OpenAIRE |
| الوصف غير متاح. |